Theoretical study of photoresponse to pulsed radiation in n-InSb in the temperature range 77–300 K

Abstract

The results of a theoretical simulation of a transient experiment in n-InSb in the temperature range 77–300 K, are reported. Minority carrier lifetimes for the three recombination processes, radiative, SRH and Auger, have been calculated at different temperatures using the temperature dependence of intrinsic carrier concentration,n _i, and density of states effective mass of heavy holes,m _d. It was found that around room temperature the lifetimes for the three processes become comparable and at higher temperatures the Auger lifetime becomes dominant. This fact was ignored in previous work where only SRH and radiative processes were considered in the calculation of effective lifetime. The present results of effective lifetime in n-InSb are in reasonably good agreement with the results obtained previously. The effect of higher time modes on the decay of photoresponse to pulsed radiation is discussed. An instantaneous time constant has been defined and its variation with time at different temperatures has been studied.