Nickel thin films prepared by chemical vapour deposition from nickel acetylacetonate

Abstract

Nickel thin films were prepared by a low-temperature atmospheric-pressure chemical vapour deposition method. The raw material was nickel acetylacetonate. At a reaction temperature above 250 °C, polycrystalline nickel films can be obtained by hydrogen reduction of the raw material. The resistivity (8.1–13.3 μΩ cm) of the film was close to that of bulk nickel.

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References

  1. 1.

    Editorial Staff,Chem. Eng. 56 (10) (1949) 118.

  2. 2.

    D. Peterson, “Non-Vacuum Deposition Techniques for Use in Fabricating Thin Film Circuits”, No. NObsr 91336, Final Report 1967.

  3. 3.

    V. G. Syrkin andYu. G. Kiryanov,J. Appl. Chem. USSR 43 (1970) 1076.

    Google Scholar 

  4. 4.

    M. Skibo andF. A. Greulich,Thin Solid Films 113 (1984) 225.

    CAS  Article  Google Scholar 

  5. 5.

    R. L. Van Hemert, L. B. Spendlove andR. E. Sievers,J. Electrochem. Soc. 112 (1965) 1123.

    CAS  Article  Google Scholar 

  6. 6.

    C. H. J. Van Den Brekel, R. M. M. Fonville, P. J. M. Van Der Straten andG. Verspui, in Proceedings of 8th International Conference on Chemical Vapor Deposition, edited by J. M. Blocher Jr, G. E. Vuillard and G. Wahl, Pennington, NJ (Electrochemical Society, Pennington, NJ, 1981) p. 142.

    Google Scholar 

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Maruyama, T., Tago, T. Nickel thin films prepared by chemical vapour deposition from nickel acetylacetonate. J Mater Sci 28, 5345–5348 (1993). https://doi.org/10.1007/BF00570088

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Keywords

  • Hydrogen
  • Polymer
  • Nickel
  • Thin Film
  • Reaction Temperature