Abstract
Infrared and Raman analyses on the configuration of hydrogenated amorphous carbon (a-C∶H) thin films on monocrystalline Ge and Si substrates have been carried out. Models of the short range order and of the non-equilibrium crystallization aggregation of the films are proposed based on the analysis results and previous works by Smith [1, 2], Lu and Wang [3] and Witten and Sander [4]. The computer simulated aggregates, according to the models, are fractals with the dimension 1.81±0.06. The films have been crystallized by laser illustration quenching. The fractal dimension of the experimentally obtained aggregates is in agreement with the simulation result.
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Liu, Z., Zhang, R., Liu, M. et al. Configuration and crystallization ofa-C∶H Film on Ge and Si substrates. J Mater Sci 28, 5313–5316 (1993). https://doi.org/10.1007/BF00570082
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DOI: https://doi.org/10.1007/BF00570082