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Specific sintering by temperature impulses as a mechanism of formation of a TiN layer in the reactive pulse plasma

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Abstract

A layer of separate TiN particles was fabricated and temperature pulsed in order to determine whether the short lasting intense heat of the deposited clusters can lead to their sintering. It was found that a specific sintering process is inseparably involved in the process of crystallization of the layer from the pulse plasma. The pulse heating also causes an increase in the adhesion of the layer to the substrate.

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References

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Authors and Affiliations

  1. Institut of Materials Science and Engineering, Warsaw University of Technology, ul. Narbutta 85, 02-524, Warsaw, Poland

    Z. Romanowski

  2. Cable Factory, ul. Poznańska 55, 05-850, Ożarów, Mazowiecki, Poland

    M. Wronikowski

Authors
  1. Z. Romanowski
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  2. M. Wronikowski
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Romanowski, Z., Wronikowski, M. Specific sintering by temperature impulses as a mechanism of formation of a TiN layer in the reactive pulse plasma. J Mater Sci 27, 2619–2622 (1992). https://doi.org/10.1007/BF00540678

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  • DOI: https://doi.org/10.1007/BF00540678

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