Abstract
The compression creep behaviour of pressureless sintered Y2O3/Al2O3/AIN-doped Si3N4 was studied between 1473 and 1673 K, under stresses ranging from 100–300 MPa. Strain rate versus stress and temperature analysis give a stress exponent n≃1 and an activation energy Q=860 kJ mol−1. Microstructural change was investigated by transmission electron microscopy. The observed strain whorls, the stress exponent and the activation energy are indicative of a solution-diffusion-precipitation accommodated grain-boundary sliding where the diffusion through the glass is rate controlling.
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Crampon, J., Duclos, R. & Rakotoharisoa, N. Creep behaviour of Si3N4/Y2O3/Al2O3/AIN alloys. Journal of Materials Science 28, 909–916 (1993). https://doi.org/10.1007/BF00400873
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DOI: https://doi.org/10.1007/BF00400873