Abstract
R-curves for two in situ reinforced silicon nitrides A and B of different microstructures were determined by three different characterization methods. The saturated crack growth resistance was found to be 5.2, 7.2 and 9.2 MPa m1/2 for silicon nitride A and 5.8, 8.0 and 10.0 MPam1/2 for silicon nitride B, respectively, by indentation, indentation-crack growth, and indentation-strength methods. The rising behaviour of R-curves was also found to depend on the characterization method. These results indicate that care should be taken in interpreting and utilizing R-curves evaluated from different characterization methods and an R-curve characterization method with appropriate qualifiers is needed for rising R-curve materials.
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Visiting scientist, on leave from Korea Institute of Science and Technology, Seoul, Korea.
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Kim, Y.W., Mitomo, M. & Hirosaki, N. R-curve behaviour of sintered silicon nitride. JOURNAL OF MATERIALS SCIENCE 30, 4043–4048 (1995). https://doi.org/10.1007/BF00360707
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DOI: https://doi.org/10.1007/BF00360707