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Cross-sectional observation of NaClO stain-etched Al0.5Ga0.5As/GaAs multilayer by atomic force microscopy

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Abstract

The cross-section of multilayered Al0.5Ga0.5As/GaAs epitaxial structure was investigated by atomic force microscopy (AFM). For the first time, a 5% NaClO etchant was employed to discern each layer and a clear cross-sectional image of the multilayered epitaxial structure was obtained in less than 3 s etching time. The AFM image using 0.1 m HCl was poorer than that using 5% NaClO; this is attributed to the difference in etching selectivity between HCl and NaClO solution.

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Authors and Affiliations

  1. Division of Electronics and Information Technology, Korea Institute of Science and Technology, P. O. Box 131, 130-650, Cheongryang, Seoul, Korea

    Hee Jeen Kim & Jae Sung Kim

  2. Department of Physics, Sookmyung Women's University, 140-720, Chungpa-dong, Seoul, Korea

    Yong Kim, Moo Sung Kim & Suk-Ki Min

Authors
  1. Hee Jeen Kim
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  2. Jae Sung Kim
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  3. Yong Kim
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  4. Moo Sung Kim
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  5. Suk-Ki Min
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Kim, H.J., Kim, J.S., Kim, Y. et al. Cross-sectional observation of NaClO stain-etched Al0.5Ga0.5As/GaAs multilayer by atomic force microscopy. JOURNAL OF MATERIALS SCIENCE 30, 678–682 (1995). https://doi.org/10.1007/BF00356327

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  • DOI: https://doi.org/10.1007/BF00356327

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