Abstract
The chemical vapour deposition (CVD) technique based upon reaction among aluminium chloride (AlCl3), silicon chloride (SiCl4) and oxygen was applied to produce submicrometresized mullite (3Al2O3 ·2SiO2) powder. The conditions for preparing the best crystalline mullite were as follows: (i) the reaction temperature, 1200 °C; (ii) the flow rate of carrier gas (Ar) of AlCl3, 0.3 dm3 min−1, and that of SiCl4, 0.3 dm3 min−1; (iii) the sublimation temperature of AlCl3, 180 °C, and the evaporation temperature of SiCl4, 25 °C; and (iv) the flow rate of oxygen, 0.9 dm3 min−1. The as-prepared powder contained mullite, a small amount of γ-Al2O3 (Al-Si spinel) and amorphous material; this powder was composed of spherical primary particles of ∼ 0.05 μm diameter. Although only mullite was present at the calcination temperature of 1300 °C, a small amount of α-Al2O3 was formed at 1400–1700 °C. Agglomeration due to primary particle growth started at temperatures exceeding 1400 °C.
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Itatani, K., Kubozono, T., Howell, F.S. et al. Some properties of mullite powders prepared by chemical vapour deposition. JOURNAL OF MATERIALS SCIENCE 30, 1158–1165 (1995). https://doi.org/10.1007/BF00356114
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DOI: https://doi.org/10.1007/BF00356114