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A simple estimate of deposited energy and concentration profiles in films produced by Ion-Assisted Physical Vapour Deposition

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Abstract

Analytical expressions for estimating the energy dissipation and the film constituent concentration profiles in films grown by Ion-Assisted Physical Vapour Deposition (IA PVD) are given. Two cases of IA PVD are considered: ion-assistance performed by inert-gas ions as well as by ions of a film constituent. As an example of application, concentration and damage depth profiles in h-BN films grown by IA PVD are calculated and a comparison is made with results obtained by computer simulation.

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Author notes

  1. G. I. Grigorov

    Present address: Institute of Electronics BAS, 72 Blvd. Tzarigradsko Chaussee, 1784, Sofia, Bulgaria

Authors and Affiliations

  1. Institut d'Electronique Fondamentale, URA CNRS, Université Paris-Sud, Bât. 220, F-91405, Orsay Cedex, France

    K. G. Grigorov & D. Bouchier

  2. CECM/CNRS, 15, rue G. Urbain, F-94400, Vitry-sur-Seine, France

    G. I. Grigorov, J-L Vignes & J-P Langeron

Authors
  1. K. G. Grigorov
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  2. D. Bouchier
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  3. G. I. Grigorov
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  4. J-L Vignes
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  5. J-P Langeron
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Grigorov, K.G., Bouchier, D., Grigorov, G.I. et al. A simple estimate of deposited energy and concentration profiles in films produced by Ion-Assisted Physical Vapour Deposition. Appl. Phys. A 58, 619–622 (1994). https://doi.org/10.1007/BF00348175

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  • DOI: https://doi.org/10.1007/BF00348175

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