Advertisement

Hardware Implementation of GaN-HEMT Based ZVS DC–DC Converter Considering PCB Layout

  • Dongmyoung Joo
  • Hyun-Bin Kim
  • Byoung-Kuk Lee
  • Jong-Soo Kim
Original Article

Abstract

The gallium nitride high electron mobility transistors (GaN HEMT) are among the most promising power semiconductor devices. However, these transistors have a small gate voltage margin compared with conventional power devices. In this paper, the gate voltage of GaN HEMTs is mathematically analyzed when it is applied to a zero voltage switching (ZVS) phase-shift full bridge (PSFB) DC–DC converter. The analysis accounts for nonlinear capacitance characteristics under the ZVS switching condition, and a critical parasitic inductance are derived to restrict the gate voltage to a safety operation area. The optimal layout for bridge topologies and gate drivers is proposed, to satisfy the derived parasitic inductance limitation. A 500-W-power laboratory phase-shift full-bridge DC–DC converter is implemented to verify the proposed layout.

Keywords

GaN HEMT Wide bandgap device Switching devices Resonant DC–DC converter PCB layout 

Notes

Acknowledgements

This work is supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (NRF-2017R1D1A1B03033140) and Industrial Technology Innovation Program through the Ministry of Trade, Industry and Energy (MOTIE) (2018201010650A).

References

  1. 1.
    Millan J, Godignon P, Perpina X, Perez-Tomas A, Rebollo J (2014) A survey of wide bandgap power semiconductor devices. IEEE Trans Power Electron 29(5):2155–2163CrossRefGoogle Scholar
  2. 2.
    Ishibashi T, Okamoto M, Hiraki E, Tanaka T, Hashizume T, Kikuta D, Kachi T (2015) Experimental validation of normally-on GaN HEMT and its gate drive circuit. IEEE Trans Ind Appl 51(3):2415–2422CrossRefGoogle Scholar
  3. 3.
    Huang X, Liu Z, Li Q, Lee F (2014) Evaluation and application of 600 V GaN HEMT in cascode structure. IEEE Trans Power Electron 29(5):2453–2461CrossRefGoogle Scholar
  4. 4.
    Huang X, Li Q, Liu Z, Lee FC (2014) Analytical loss model of high voltage GaN HEMT in cascode configuration. IEEE Trans Power Electron 29(5):2208–2219CrossRefGoogle Scholar
  5. 5.
    Mitova R, Ghosh R, Mhaskar U, Klikic D, Wang MX, Dentella A (2014) Investigations of 600-v gan hemt and gan diode for power converter applications. IEEE Trans Power Electron 29(5):2441–2452CrossRefGoogle Scholar
  6. 6.
    Liu Z, Huang X, Lee FC, Li Q (2014) Package parasitic inductance extraction and simulation model development for the high-voltage cascode GaN HEMT. IEEE Trans Power Electron 29(4):1977–1985CrossRefGoogle Scholar
  7. 7.
    Liu Z (2014) Characterization and failure mode analysis of cascode GaN HEMT. Ms. Dissertation, Dept. Electrical. Eng., Univ. Blacksburg, VirginiaGoogle Scholar
  8. 8.
    Peng K, Eskandari S, Santi E (2016) Characterization and modeling of a gallium nitride power HEMT. IEEE Trans Ind Appl 52(6):4965–4975CrossRefGoogle Scholar
  9. 9.
    Shirabe K et al (2014) Efficiency comparison between Si-IGBT-based drive and GaN-based drive. IEEE Trans Ind Appl 50(1):566–572CrossRefGoogle Scholar
  10. 10.
    Reusch D, Strydom J (2014) Understanding the effect of pcb layout on circuit performance in a high-frequency gallium-nitride-based point of load converter. IEEE Trans Power Electron 29(4):2008–2015CrossRefGoogle Scholar
  11. 11.
    Hariya A, Matsuura K, Yanagi H, Tomioka S, Ishizuka Y, Ninomiya T (2015) Five-megahertz PWM-controlled current-mode resonant DC–DC step-down converter using GaN-HEMTs. IEEE Trans Ind Appl 51(4):3263–3272CrossRefGoogle Scholar
  12. 12.
    Reusch D, Strydom J (2015) Evaluation of gallium nitride transistors in high frequency resonant and soft-switching DC–DC converters. IEEE Trans Power Electron 30(9):5151–5158CrossRefGoogle Scholar
  13. 13.
    GaN systems (2018) Design with GaN Enhancement mode HEMT. Appl. note GN001. https://gansystems.com/wp-content/uploads/2018/04/GN001-Design_with_GaN_EHEMT_180412.pdf (online)
  14. 14.
    Lu J, Bai H, Brown A, McAmmond M, Chen D, Styles J (2016) Design consideration of gate driver circuits and PCB parasitic parameters of paralleled E-mode GaN HEMTs in zero-voltage-switching applications. In: Proc. 31th Annu. IEEE Appl. Power Electron. Conf. Expo. (APEC 2016), Mar. 20–24, pp 529–535Google Scholar
  15. 15.
    Mohan N, Robbin WP, Undeland T (1995) Power electronics: converters, applications, and design, 3rd edn. Wiley, New York, pp 583–587Google Scholar
  16. 16.
    ON Semiconductor (2013) Active miller clamp technology. Appl. note AN-5073. https://www.fairchildsemi.com/application-notes/AN/AN-5073.pdf (Online)
  17. 17.
    Joo DM, Lee BK, Kim JS (2016) Dead-time optimisation for a phase-shifted DC–DC full bridge converter with GaN HEMT. IET Electron Lett 52(9):769–770CrossRefGoogle Scholar
  18. 18.
    Texas Instruments (2013) SIMPLE SWITCHER® PCB layout guidelines. Appl. note AN-1229. http://www.ti.com/lit/an/snva054c/snva054c.pdf (Online)

Copyright information

© The Korean Institute of Electrical Engineers 2019

Authors and Affiliations

  • Dongmyoung Joo
    • 2
  • Hyun-Bin Kim
    • 1
  • Byoung-Kuk Lee
    • 3
  • Jong-Soo Kim
    • 1
  1. 1.Division of Electric EngineeringDaejin UniversityPocheonSouth Korea
  2. 2.Intelligent Mechatronics Research CenterKorea Electronics Technology InstituteSeongnamSouth Korea
  3. 3.Department of Electrical and Computer EngineeringSungkyunkwan UniversitySeoulSouth Korea

Personalised recommendations