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Silica Nano-particle Anneal Treatment and Its Effect on Chemical Mechanical Polishing

  • Shibin Lu
  • Haibo WangEmail author
  • Ying Meng
  • Feifei Wang
  • Min Fan
  • Junning ChenEmail author
Original Article

Abstract

Introduction

Chemical mechanical polishing is the only one technology to obtain global planarization, which is widely applied to polish silicon, copper dual damascene structure, high/low K dielectric materials, tungsten plugs, poly-silicon gates and shallow trench isolation structure. SiO2 is widely used as abrasive for its superior properties like stability, suspension property and low viscosity There are lots of studies on silica properties. However, the detailed silica surface, inner characteristic and its effect on polishing performance are still unclear. we must also explore the silica nano-particle tiny structure difference, so we designed an experiment that we anneal the colloid silica and re-dispersed it to analyze the variety of particles properties and its influences on CMP performance.

Materials

The water glass was purchased from the market. KOH (90%) and H2SO4 (98%) were purchased commercially from Shanghai Aladdin Bio-Chem technology Co., Ltd. All reagents were of analytical grade and used without further purification.

Method

Diluted KOH or H2SO4 were added to 1 wt% annealed silica slurry to adjust pH value to 11.0. The slurry was milled in the polishing process. Arsenic doped 4 inch (100) silicon wafer was used to polish. The structural and morphological evolution of silica nano-particles induced by heat treatment are studied by scanning electron microscopy (SEM), X-Ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), differential thermal (DTA) and thermal gravimetric analysis (TGA), which disclose the external and internal structure.

Keywords

Silicon Chemical mechanical polishing Colloid silica Nano-indentation 

Notes

Acknowledgements

Thanks for discussion of manager Yong Peng from Chizhou NationT Semiconductor CO., LTD. This work is sponsored by Anhui Province Science and Technology Major Project (Grant no. 17030901009), the Key University Natural Science Research Project of Anhui Province (KJ2014A208),Research Foundation for School Talents of Hefei Normal University (Grant no. 2016rcjj07);and the horizontal subject from Chizhou NationT Semiconductor CO., LTD, the title is design and application development of SIP packaging technology based on copper substrate.

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Copyright information

© The Korean Institute of Electrical Engineers 2019

Authors and Affiliations

  1. 1.School of Electronics and Information EngineeringAnhui UniversityHefeiChina
  2. 2.School of Electronic Information and Electrical EngineeringHefei Normal UniversityHefeiChina
  3. 3.School of Physics and Materials EngineeringHefei Normal UniversityHefeiChina

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