Improve the Performance of a Novel Capacitive Shunt RF MEMS Switch by Beam and Dielectric Materials
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This paper deals with design and simulation of RF MEMS Shunt type switch having non-uniform meanders. The device is optimized and done various electromechanical and RF performance analysis in the COMSOL multiphysics and HFSS tools. By varying the thickness of beam, gap and changing the beam materials such as Gold, Copper, Nickel, we done simulation and calculation of spring constant, pull-in voltage, capacitance analysis of the proposed switch. Out of all these different materials, Gold is best by its material properties. The pull-in voltage of proposed switch is 16.9 V, the switch have fast switching time i.e. 1.2 µs. The capacitance analysis like Up state and down state capacitance of the proposed switch is 7.46 fF and 1.25 pF. The RF-Performance of the proposed switch exhibits at low frequencies (2–12 GHz). The return and insertion loss are carried out by proposed switch is − 41.55 dB, − 0.0865 dB respectively. The switch having good isolation is − 47.70 dB at 5 GHz. The proposed shunt type switch is used for low frequencies such as microphones, radar and satellite applications.
KeywordsPull-in-voltage RF shunt switch Capacitance analysis Beam materials
The authors would like to thank NMDC, supported by Govt. of India, for providing necessary design facilities through NPMASS.
- 3.G.P. Rehder, S. Mir, L. Rufer, E. Simeu, H.N. Nguyen, Low frequency test for RF MEMS switches. IEEE 1, 350–354 (2010)Google Scholar
- 7.A. Ziaei, S. Bansropun, P. Martins, M. Le Baillif, Fast high power capacitive RF-MEMS switch for X-Band applications, in 2015 45th European Solid State Device Research Conference (ESSDERC) (IEEE, 2015), pp. 153–155Google Scholar
- 11.S.P. Pacheco, L.P.B. Katehi, C.T.-C. Nguyen, Design of low actuation voltage RF MEMS switch, in 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 00CH37017), vol. 1 (IEEE, 2000), pp. 165–168Google Scholar
- 14.K. Rangra, M. Kaur, D. Kumar, Design optimization of RF MEMS capacitive symmetric toggle switch for X-band wireless applications, in Proceeding of ISSS-07, Pilani, India (2016)Google Scholar