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Performance Study of the Micromorph Silicon Tandem Solar Cell Using Silvaco TCAD Simulator

  • A. F. Bouhdjar
  • M. Adaika
  • Am. MeftahEmail author
  • R. Boumaraf
  • Af. Meftah
  • N. Sengouga
Regular Paper
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Abstract

This paper is concerned with the numerical modelling of a micromorph silicon tandem solar cell (a-Si:H/µc-Si:H), under series (two-terminal: 2T) and independent (four-terminal: 4T) electrical connection. The study is performed using the simulation software Silvaco TCAD. Both the initial (un-degraded or annealed) state, and the light induced degradation one (well-known Staebler–Wronski effect in a-Si:H) are considered for the studied solar cell, operating under the standard global solar spectrum (AM1.5G). The 2T- and 4T-device optimization is carried out under the effects of the intrinsic (i)-layer thickness of the two sub-cells, and the free carrier mobilities through these layers. By increasing the i-layer thickness of the two sub-cells, the 2T-micromorph tandem cell reveals an optimal conversion efficiency \(\eta\) of 10% and 7.77% corresponding, respectively, to the initial and degraded states. The 4T-configuration exhibits a relatively better \(\eta\) of 10.94% at initial state, reduced only to 9.59% at the degraded one. Further improvement of the 2T and 4T-cell output parameters is obtained by increasing the free carrier mobilities, particularly through the top-cell i-layer. By this way, the better \(\eta\) is also ensured by the 4T-device, which displays an initial state-\(\eta\) of 12.31%, reduced only to 11.43% at the degraded state. However, the improved efficiencies reached by the 2T-configuration are 11.87% and 10.41% corresponding, respectively, to the initial and degraded states.

Keywords

a-Si:H µc-Si:H Tandem solar cell Micromorph Numerical simulation 

Notes

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Copyright information

© The Korean Institute of Electrical and Electronic Material Engineers 2019

Authors and Affiliations

  1. 1.Laboratory of Metallic and Semi-conducting MaterialsUniversity of BiskraBiskraAlgeria

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