Amorphous Si–Zn–Sn–O Thin Film Transistor with In–Si–O as Transparent Conducting Electrodes
- 8 Downloads
We revealed a novel method to fabricate amorphous silicon-zinc-tin-oxide (a-SZTO) thin-film transistors (TFTs) has been reported with transparent Indium–silicon–oxide (ISO) source/drain (S/D) electrodes. The presented TFTs exhibited a high field-effect mobility of 14.65 cm2/Vs, a threshold voltage of 2.87 V, and a low subthreshold swing of 0.39 V/decade. It is suggested that the small work function of ISO (4.49 eV) compared to that of a-SZTO (4.53 eV) induces an ohmic contact at the ISO/SZTO junction, which makes it possible the effective injection of electrons from oxide materials into the a-SZTO semiconductor. Determine the stability of a-SZTO TFTs under Negative bias temperature stress (NBTS) was measured ∆VTH = 1.21 V at 333 K, and − 20 V for 7200 s.
KeywordsAmorphous oxide semiconductor TCE NBTS Transmittance
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1D1A3B06033837) and the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No.20172010104940). In addition, this research was partially supported by the Cheongju University Research Scholarship Grants in 2019.
- 15.C.Y. Wu, C.J. Lin, C.Y. Huang, H.L. Chen, Y.C. Kao, M.C. Hung, W.T. Lin, J.J. Chang. P.L. Chen, C.H. Chen, SID Symp. Dig. Tech. Pap. 41, 1298 (2010)Google Scholar