Controlled one step thinning and doping of two-dimensional transition metal dichalcogenides

  • Jie Ren (任洁)
  • Changjiu Teng (腾长久)
  • Zhengyang Cai (蔡正阳)
  • Haiyang Pan (潘海洋)
  • Jiaman Liu (刘佳曼)
  • Yue Zhao (赵悦)
  • Bilu Liu (刘碧录)Email author


Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have drawn intensive attention due to their ultrathin feature with excellent electrostatic gating capability, and unique thickness-dependent electronic and optical properties. Controlling the thickness and doping of 2D TMDCs are crucial toward their future applications. Here, we report an effective HAuCl4 treatment method and achieve simultaneous thinning and doping of various TMDCs in one step. We find that the HAuCl4 treatment not only thins thick MoS2 flakes into few layers or even monolayers, but also simultaneously tunes MoS2 into p-type. The effects of various parameters in the process have been studied systematically, and an Au intercalation assisted thinning and doping mechanism is proposed. Importantly, this method also works for other typical TMDCs, including WS2, MoSe2 and WSe2, showing good universality. Electrical transport measurements of field-effect transistors (FETs) based on MoS2 flakes show a big increase of On/Off current ratios (from 102 to 107) after the HAuCl4 treatment. Meanwhile, the subthreshold voltages of the MoS2 FETs shift from −60 to +27 V after the HAuCl4 treatment, with a p-type doping behavior. This study provides an effective and simple method to control the thickness and doping properties of 2D TMDCs, paving a way for their applications in high performance electronics and optoelectronics.


2D materials transition metal dichalcogenides MoS2 thinning doping field-effect transistor HAuCl4 



二维过渡金属硫族化合物(TMDCs)具有超薄结构, 且其电 学、光学性质对厚度具有很强的依赖性, 近年来备受研究者们的 广泛关注. 如何控制TMDCs的厚度和掺杂, 是其未来应用的关键 所在. 本文提出了一种简单高效的HAuCl4处理方法, 实现了 TMDCs的一步法可控减薄和掺杂, 可以制备出薄层及单层TMDCs, 同时实现了对MoS2的可控p型掺杂. 本文系统研究了关键实验参数 的影响, 并基于此提出了金插层辅助减薄和掺杂TMDCs的机理. 研 究还发现该方法具有普适性, 可以实现对多种TMDCs的可控减薄, 包括MoSe2, WS2, WSe2. 电学测试表明, HAuCl4处理后的MoS2纳米 片具有更高的场效应晶体管开关比, 其阈值电压向正电压方向偏 移. 本工作提出的这种控制二维TMDCs材料厚度和掺杂的方法, 对其未来在高性能电子和光电器件的应用具有一定参考价值.



We acknowledge the support from the National Natural Science Foundation of China (51722206 and 11674150), the Youth 1000-Talent Program of China, the Economic, Trade and Information Commission of Shenzhen Municipality for the “2017 Graphene Manufacturing Innovation Center Project” (201901171523), Shenzhen Basic Research Project (JCYJ20170307140956657 and JCYJ20160613160524999), Guangdong Innovative and Entrepreneurial Research Team Program (2017ZT07C341 and 2016ZT06D348), and the Development and Reform Commission of Shenzhen Municipality for the development of the “Low-Dimensional Materials and Devices” discipline.

Supplementary material

40843_2019_9461_MOESM1_ESM.pdf (1.9 mb)
Controlled one step thinning and doping of two-dimensional transition metal dichalcogenides


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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Jie Ren (任洁)
    • 1
  • Changjiu Teng (腾长久)
    • 1
  • Zhengyang Cai (蔡正阳)
    • 1
  • Haiyang Pan (潘海洋)
    • 2
  • Jiaman Liu (刘佳曼)
    • 1
  • Yue Zhao (赵悦)
    • 2
  • Bilu Liu (刘碧录)
    • 1
    Email author
  1. 1.Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen InstituteTsinghua UniversityShenzhenChina
  2. 2.Shenzhen Institute for Quantum Science and Engineering and Department of PhysicsSouth University of Science and Technology of ChinaShenzhenChina

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