Self-catalyzed growth of GaSb nanowires for high performance ultraviolet-visible-near infrared photodetectors
A simple self-catalyzed chemical vapor deposition process was conducted to synthesize single-crystalline GaSb nanowires, where Ga droplets were utilized as the catalysts. The as-grown GaSb nanowires exhibited typical p-type semiconductor behavior with the calculated hole mobility of about 0.042 cm2 V−1 s−1 The photoresponse properties of the GaSb nanowires were studied by fabricating nanowire photodetectors on both rigid and flexible substrates. The results revealed that the photodetectors exhibited broad spectral response ranging from ultraviolet, visible, to near infrared region. For the device on rigid substrate, the corresponding responsivity and the detectivity were calculated to be 3.86×103A W−1 and 3.15×1013 Jones for 500 nm light, and 7.22×102A W−1 and 5.90×1012 Jones for 808 nm light, respectively, which were the highest value compared with those of other reported Ga1−xInxAsySb1−y structure nanowires. Besides, the flexible photodetectors not only maintained the comparable good photoresponse properties as the rigid one, but also possessed excellent mechanical flexibility and stability. This study could facilitate the understanding on the fundamental characteristics of self-catalyzed grown GaSb nanowires and the design of functional nano-optoelectronic devices based on Gasb nanowires.
KeywordsGaSb nanowires chemical vapor deposition mobility photoresponse near-infrared flexible
本文应用镓金属液滴作为催化剂, 采用化学气相沉积方法自 催化合成了单晶GaSb纳米线. 研究表明该GaSb纳米线为典型的p型 半导体, 霍尔迁移率为> 0.042 cm2 V−1 s−1. 硅基和柔性衬底上构筑 的基于GaSb纳米线的光电探测器, 具有良好的紫外-可见-近红外宽 光谱探测性能. 硅基器件对5 0 0 nm的可见光响应率可达 3.86×103 A W−1, 探测率可达3.15×1013 Jones; 柔性器件在保持相似 光电性能的同时, 具有极好的机械柔韧性和稳定性. 本文有助于更 好地揭示自催化生长的GaSb纳米线的性能, 并为进一步设计基于 GaSb纳米线的功能光电器件打下了实验基础.
This work was supported by the National Natural Science Foundation of China (61574132 and 61625404).