Chemical Research in Chinese Universities

, Volume 35, Issue 6, pp 1058–1061 | Cite as

Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs

  • Xiangyang Ren
  • Sha Xia
  • Zhiguo Zhang
  • Xing Meng
  • Hongmei Yu
  • Qi Wu
  • Wenyi Zhang
  • Aiwu LiEmail author
  • Han YangEmail author


Two-dimensional(2D) materials with a high density and low power consumption have become the most popular candidates for next-generation semiconductor electronic devices. As a prototype 2D material, graphene has attracted much attention owing to its stability and ultrahigh mobility. However, zero band gap of graphene leads to very low on-off ratios and thus limits its applications in electronic devices, such as transistors. Although some new 2D materials and doped graphene have nonzero band gaps, the electronic mobility is sacrificed. In this study, to open the band gap of graphene with high electronic mobility, the structure and property of BN-doped graphene were evaluated using first-principles calculations. The formation energies indicate that the six-membered BN rings doped graphene has the most favorable configuration. The band structures show that the band gaps can be opened by such type of doping. Also, the Dirac-cone-like band dispersion of graphene is mostly inhibited, ensuring high electronic mobility. Therefore, codoping BN into graphene might provide 2D materials with nonzero band gaps and high electronic mobility.


First-principle calculation Doping Optoelectronic property Mobility 


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Copyright information

© Jilin University, The Editorial Department of Chemical Research in Chinese Universities and Springer-Verlag GmbH 2019

Authors and Affiliations

  • Xiangyang Ren
    • 1
    • 2
  • Sha Xia
    • 1
  • Zhiguo Zhang
    • 2
  • Xing Meng
    • 3
  • Hongmei Yu
    • 4
  • Qi Wu
    • 4
  • Wenyi Zhang
    • 5
  • Aiwu Li
    • 1
    Email author
  • Han Yang
    • 1
    Email author
  1. 1.State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and EngineeringJilin UniversityChangchunP. R. China
  2. 2.Shenyang Acadamy of Instrumentation Science Co., Ltd.ShenyangP. R. China
  3. 3.College of PhysicsJilin UniversityChangchunP. R. China
  4. 4.College of Computer Science and TechnologyJilin UniversityChangchunP. R. China
  5. 5.Systems Engineering Research InstituteBeijingP. R. China

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