Journal of Advanced Ceramics

, Volume 7, Issue 3, pp 256–265 | Cite as

Temperature dependent conductivity of Bi4Ti3O12 ceramics induced by Sr dopants

  • Lin Wang
  • Mengqi Gui
  • Hai-Bo Jin
  • Xinyuan Hu
  • Yongjie Zhao
  • Naseer Muhammad Adnan
  • Jing-Bo LiEmail author
Open Access
Research Article


Bi4Ti3O12 is an important lead-free ferroelectric material. Doping modification of Bi4Ti3O12 has attracted great attention to improving its performances. In this work, the effect of Sr dopants on the microstructure, dielectric, and conductivity of Bi4Ti3O12 ceramic was investigated by XRD, SEM, and AC impedance spectroscopy. Substitution of 1 at% Sr for Bi decreased the grain size, suppressed the dielectric dispersion of Bi4Ti3O12 ceramic at room temperature, and resulted in different effects on the conductivity of grains and grain boundaries. The conductivity of grains in Bi4Ti3O12 ceramic was increased by the small amount of Sr dopants in the whole experimental temperature range. While the grain boundaries of 1 at% Sr-doped Bi4Ti3O12 exhibited lower conductivity than pure Bi4Ti3O12 below ~380 °C and higher conductivity above ~380 °C. The experimental phenomena were interpreted in term of compensating defects for Sr dopants.


dielectric impedance analysis electrical properties defects Aurivillius compound 



This work is supported by National Basic Research Program of China (No. 2016YFB0700502) and National Natural Science Foundation of China (No. 51372024).

Supplementary material

40145_2018_277_MOESM1_ESM.pdf (265 kb)
Temperature dependent conductivity of Bi4Ti3O12 ceramics induced by Sr dopants


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Copyright information

© The Author(s) 2018

Authors and Affiliations

  • Lin Wang
    • 1
  • Mengqi Gui
    • 1
  • Hai-Bo Jin
    • 1
  • Xinyuan Hu
    • 1
  • Yongjie Zhao
    • 1
  • Naseer Muhammad Adnan
    • 1
  • Jing-Bo Li
    • 1
    Email author
  1. 1.Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, School of Materials Science and EngineeringBeijing Institute of TechnologyBeijingChina

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