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Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth

  • Takahiro TsukamotoEmail author
  • Nobumitsu Hirose
  • Akifumi Kasamatsu
  • Toshiaki Matsui
  • Yoshiyuki Suda
Original Article - Electronics, Magnetics and Photonics
  • 19 Downloads

Abstract

We investigate the effects of the low-temperature (LT) GeSn buffer layers on Sn surface segregation during the growth of the additional GeSn layers. Sn surface segregation was observed in the GeSn layers formed on Si substrates at the growth temperature of 300 °C. However, there was no Sn surface segregation in the GeSn layers grown at 300 °C on the LT GeSn buffer layers formed at 225 °C. The Sn surface segregation was limited by the effects of the LT buffer layers. Crystallinity of the GeSn layers grown at 300 °C on the LT GeSn buffer layers was investigated by Raman spectroscopy. The full width at half maximum of the Ge–Ge Raman spectrum obtained from the GeSn layers was about 3.1 cm−1, which means that the formed GeSn layers have excellent crystallinity. We have successfully demonstrated that the LT GeSn buffer layers can limit the Sn surface segregation, which increases the growth temperature and improves crystallinity of the GeSn layers.

Graphic Abstract

Keywords

GeSn Sputter epitaxy Buffer layer Sn segregation Raman 

Notes

Acknowledgements

This research and development work was supported by the MIC/SCOPE #165103005. This work was partly carried out in the Advanced ICT Devices Lab in NICT.

References

  1. 1.
    Chen, R., Gupta, S., Huang, Y.C., Huo, Y., Rudy, C.W., Sanchez, E., Kim, Y., Kamins, T.I., Saraswat, K.C., Harris, J.S.: Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics. Nano Lett. 14, 37–43 (2014)CrossRefGoogle Scholar
  2. 2.
    Wirths, S., Geiger, R., von den Driesch, N., Mussler, G., Stoica, T., Mantl, S., Ikonic, Z., Luysberg, M., Chiussi, S., Hartmann, J.M., Sigg, H., Faist, J., Buca, D., Grützmacher, D.: Lasing in direct-bandgap GeSn alloy grown on Si. Nat. Photonics 9, 88–92 (2015)CrossRefGoogle Scholar
  3. 3.
    Schwartz, B., Oehme, M., Kostecki, K., Widmann, D., Gollhofer, M., Koerner, R., Bechler, S., Fischer, I.A., Wendav, T., Kasper, E., Schulze, J., Kittler, M.: Electroluminescence of GeSn/Ge MQW LEDs on Si substrate. Opt. Lett. 40, 3209–3212 (2015)CrossRefGoogle Scholar
  4. 4.
    Stange, D., Wirths, S., Geiger, R., Braucks, C.S., Marzban, B., von den Driesch, N., Mussler, G., Zabel, T., Stoica, T., Hartmann, J.M., Mantl, S., Ikonic, Z., Grützmacher, D., Sigg, H., Witzens, J., Buca, D.: Optically pumped GeSn microdisk lasers on Si. ACS Photonics 3, 1279–1285 (2016)CrossRefGoogle Scholar
  5. 5.
    Al-Kabi, S., Ghetmiri, S.A., Margetis, J., Pham, T., Zhou, Y., Dou, W., Collier, B., Quinde, R., Du, W., Mosleh, A., Liu, J., Sun, G., Soref, R.A., Tolle, J., Li, B., Mortazavi, M., Naseem, H.A., Yu, S.Q.: An optically pumped 2.5 μm GeSn laser on Si operating at 110 K. Appl. Phys. Lett. 109, 171105 (2016)CrossRefGoogle Scholar
  6. 6.
    Stange, D., von den Driesch, N., Rainko, D., Roesgaard, S., Povstugar, I., Hartmann, J.M., Stoica, T., Ikonic, Z., Mantl, S., Grützmacher, D., Buca, D.: Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells. Optica 4, 185–188 (2017)CrossRefGoogle Scholar
  7. 7.
    Reboud, V., Gassenq, A., Pauc, N., Aubin, J., Milord, L., Thai, Q.M., Bertrand, M., Guilloy, K., Rouchon, D., Rothman, J., Zabel, T., Pilon, F.A., Sigg, H., Chelnokov, A., Hartmann, J.M., Calvo, V.: Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K. Appl. Phys. Lett. 111, 092101 (2017)CrossRefGoogle Scholar
  8. 8.
    Margetis, J., Al-Kabi, S., Du, W., Dou, W., Zhou, Y., Pham, T., Grant, P., Ghetmiri, S., Mosleh, A., Li, B., Liu, J., Sun, G., Soref, R., Tolle, J., Mortazavi, M., Yu, S.Q.: Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K. ACS Photonics 5, 827–833 (2018)CrossRefGoogle Scholar
  9. 9.
    Tsukamoto, T., Hirose, N., Kasamatsu, A., Mimura, T., Matsui, T., Suda, Y.: Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method. J. Mater. Sci. 50, 4366–4370 (2015)CrossRefGoogle Scholar
  10. 10.
    Shin, K.W., Kim, H.W., Kim, J., Yang, C., Lee, S., Yoon, E.: The effects of low temperature buffer layer on the growth of pure Ge on Si(001). Thin Solid Films 518, 6496–6499 (2010)CrossRefGoogle Scholar
  11. 11.
    Zheng, J., Li, L., Zhou, T., Zuo, Y., Li, C., Cheng, B., Wang, Q.: Growth of crystalline Ge1−xSnx films on Si (100) by magnetron sputtering. ECS Solid State Lett. 3, P111–P113 (2014)CrossRefGoogle Scholar
  12. 12.
    Fujimura, S., Someya, T., Yoshiba, S., Tsukamoto, T., Kamisako, K., Suda, Y.: Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method. Jpn. J. Appl. Phys. 54, 08KD01 (2015)CrossRefGoogle Scholar
  13. 13.
    Tsukamoto, T., Hirose, N., Kasamatsu, A., Mimura, T., Matsui, T., Suda, Y.: Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy. Appl. Phys. Lett. 106, 052103 (2015)CrossRefGoogle Scholar
  14. 14.
    Tsukamoto, T., Hirose, N., Kasamatsu, A., Mimura, T., Matsui, T., Suda, Y.: Control of surface flatness of Ge layers directly grown on Si (001) substrates by DC sputter epitaxy method. Thin Solid Films 592, 34–38 (2015)CrossRefGoogle Scholar
  15. 15.
    Zheng, J., Wang, S., Liu, Z., Cong, H., Xue, C., Li, C., Zuo, Y., Cheng, B., Wang, Q.: GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy. Appl. Phys. Lett. 108, 033503 (2016)CrossRefGoogle Scholar
  16. 16.
    Lee, J., Cho, H., Seo, D., Cho, S., Park, B.G.: Crystallization and characterization of GeSn deposited on Si with Ge buffer layer by low-temperature sputter epitaxy. J. Semicond. Technol. Sci. 16, 854–859 (2016)CrossRefGoogle Scholar
  17. 17.
    Otsuka, S., Mori, T., Morita, Y., Uchida, N., Liu, Y., Ouchi, S., Fuketa, H., Migita, S., Masahara, M., Matsukawa, T.: Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering. Mater. Sci. Semicond. Process. 70, 3–7 (2017)CrossRefGoogle Scholar
  18. 18.
    Watanabe, R., Tsukamoto, T., Kamisako, K., Suda, Y.: Crystallinity control of SiC grown on Si by sputtering method. J. Crystal Growth 463, 67–71 (2017)CrossRefGoogle Scholar
  19. 19.
    Mahmodi, H., Hashim, M.R.: Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1−xSnx films on Si substrate. Chin. Phys. B 26, 056801 (2017)CrossRefGoogle Scholar
  20. 20.
    Zheng, J., Wang, S., Cong, H., Fenrich, C.S., Liu, Z., Xue, C., Li, C., Zuo, Y., Cheng, B., Harris, J.S., Wang, Q.: Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy. Opt. Lett. 42, 1608–1611 (2017)CrossRefGoogle Scholar
  21. 21.
    Chen, R., Huang, Y.C., Gupta, S., Lin, A.C., Sanchez, E., Kim, Y., Saraswat, K.C., Kamins, T.I., Harris, J.S.: Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing. J. Cryst. Growth 365, 29–34 (2013)CrossRefGoogle Scholar

Copyright information

© The Korean Institute of Metals and Materials 2019

Authors and Affiliations

  1. 1.The University of Electro-CommunicationsChofuJapan
  2. 2.National Institute of Information and Communications TechnologyKoganeiJapan
  3. 3.Tokyo University of Agriculture and TechnologyKoganeiJapan

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