High-Performance Amorphous Silicon Thin Film Solar Cells Prepared at 100 °C: Toward Flexible Building-Integrated Photovoltaics
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For low-cost and lightweight polymer/plastic substrates in flexible building-integrated photovoltaic (BIPV) modules, low-temperature processing is essential. Amorphous silicon (a-Si:H) requires processing at a temperature of 200–250 °C by plasma-enhanced chemical vapor deposition to obtain satisfactory optoelectronic properties, which limits such substrates in terms of thermal budget. This study is focused on the fabrication of p–i–n-type a-Si:H solar cells at relatively low temperatures (100 °C). Intrinsic a-Si:H films with large optical gaps (1.83 eV) were prepared at 100 °C using a high hydrogen dilution ratio. In addition, p-type amorphous silicon oxide and n-type microcrystalline silicon oxide films with large optical gaps and suitable conductivities were prepared at 100 °C using a gas mixture containing the dopant B2H6 or PH3 and CO2. Finally, an a-Si:H p–i–n cell was fabricated at 100 °C; it exhibited an excellent power conversion efficiency of 9.0%, which was higher than those reported for a-Si:H thin film photovoltaics prepared at 100 °C. We believe that this study will open promising routes for the development of high-performance and flexible BIPVs.
KeywordsAmorphous silicon Low temperature Thin film Solar cells Chemical vapor deposition
This research was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIT; NRF-2018R1C1B6008028) and was also supported by the Chung-Ang University Research Scholarship Grants in 2019.
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Conflict of interest
There are no conflicts of interest to declare.