Study of Domain Switching Using Piezoresponse Force Microscopy in Ca0.4Sr0.6Bi4Ti4O15 Thin Film for Electromechanical Applications
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An attempt has been made to synthesize (Ca0.4Sr0.6)Bi4Ti4O15 (CSBT) thin film using pulsed laser deposition method and successfully optimized the deposition conditions. Film with the desired phase was obtained at a substrate temperature 650 °C based on phase and morphology studies using vast analytical techniques. The average thickness and grain size of as prepared film was found to be in the range of 330–400 nm and 40–65 nm. Piezoresponse force microscopy showed a complete domain reversal using switching spectroscopy. A comparatively high effective d 33 * value as ~ 120 pm/V has been achieved. These results suggest that CSBT has a great future potential in electromechanical applications specially in high-temperature sensors and actuators.
KeywordsPiezoelectricity Thin films Piezoresponse force microscopy (PFM) Electrical properties
Author SM would like to gratefully acknowledge INUP-IIT Bombay for carrying out the entire experimental work.
The work is supported by Department of Science and Technology-Science and Engineering Research Board, India under Early Career Research Award scheme (Grant No. ECR/2016/000794/ES).
Compliance with Ethical Standards
Conflict of interest
The authors declare that they have no conflict of interests.
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