Advertisement

Electronic Materials Letters

, Volume 15, Issue 2, pp 166–170 | Cite as

Improved Device Ideality in Aged Organic Transistors

  • Chang-Hyun KimEmail author
Original Article - Electronics, Magnetics and Photonics
First Online:
  • 75 Downloads

Abstract

The origin of ideality improvement in aged dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) transistors is explored. High-performance plastic transistors exhibit nontrivial enhancements under ambient conditions, in the light of emerging parameterization scheme that elucidates the linearity of the transfer curves. Unintentional carrier doping in exceptionally stable DNTT molecules is suggested as the major driver of the recovery of an ideal state of the functional devices, thoroughly investigated by analytical decoupling of the channel and contact potentials as well as numerical finite-element simulation on parametric interplays.

Graphical Abstract

Keywords

Organic semiconductors Field-effect transistors DNTT Device ideality Aging 
This is a preview of subscription content, log in to check access.

Notes

Acknowledgements

This work was supported by the Gachon University research fund of 2018 (GCU-2018-0290).

References

  1. 1.
    de Mello, J., Anthony, J., Lee, S.: Organic electronics: recent developments. ChemPhysChem 16, 1099–1100 (2015)CrossRefGoogle Scholar
  2. 2.
    Kim, C.-H., Bonnassieux, Y., Horowitz, G.: Compact DC modeling of organic field-effect transistors: review and perspectives. IEEE Trans. Electron. Devices 61, 278–287 (2014)CrossRefGoogle Scholar
  3. 3.
    Blülle, B., Troisi, A., Häusermann, R., Batlogg, B.: Charge transport perpendicular to the high mobility plane in organic crystals: bandlike temperature dependence maintained despite hundredfold anisotropy. Phys. Rev. B 93, 035205 (2016)CrossRefGoogle Scholar
  4. 4.
    Bittle, E.G., Basham, J.I., Jackson, T.N., Jurchescu, O.D., Gundlach, D.J.: Mobility overestimation due to gated contacts in organic field-effect transistors. Nat. Commun. 7, 10908 (2016)CrossRefGoogle Scholar
  5. 5.
    Liu, C., Li, G., Di Pietro, R., Huang, J., Noh, Y.-Y., Liu, X., Minari, T.: Device physics of contact issues for the overestimation and underestimation of carrier mobility in field-effect transistors. Phys. Rev. Appl. 8, 034020 (2017)CrossRefGoogle Scholar
  6. 6.
    Paterson, A.F., Singh, S., Fallon, K.J., Hodsden, T., Han, Y., Schroeder, B.C., Bronstein, H., Heeney, M., McCulloch, I., Anthopoulos, T.D.: Recent progress in high-mobility organic transistors: a reality check. Adv. Mater. 31, 1801079 (2018)CrossRefGoogle Scholar
  7. 7.
    Choi, H.H., Cho, K., Frisbie, C.D., Sirringhaus, H., Podzorov, V.: Critical assessment of charge mobility extraction in FETs. Nat. Mater. 17, 2–7 (2017)CrossRefGoogle Scholar
  8. 8.
    Jung, S., Kim, C.-H., Bonnassieux, Y., Horowitz, G.: Fundamental insights into the threshold characteristics of organic field-effect transistors. J. Phys. D Appl. Phys. 48, 035106 (2015)CrossRefGoogle Scholar
  9. 9.
    Park, S.K., Mourey, D.A., Han, J.-I., Anthony, J.E., Jackson, T.N.: Environmental and operational stability of solution-processed 6,13-bis(triisopropyl-silylethynyl) pentacene thin film transistors. Org. Electron. 10, 486–490 (2009)CrossRefGoogle Scholar
  10. 10.
    Yamamoto, T., Takimiya, K.: Facile synthesis of highly π-extended heteroarenes, dinaphtho[2,3-b:2′,3′-f]chalcogenopheno[3,2-b]chalcogenophenes, and their application to field-effect transistors. J. Am. Chem. Soc. 129, 2224–2225 (2007)CrossRefGoogle Scholar
  11. 11.
    Zschieschang, U., Ante, F., Kälblein, D., Yamamoto, T., Takimiya, K., Kuwabara, H., Ikeda, M., Sekitani, T., Someya, T., Blochwitz-Nimoth, J., Klauk, H.: Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors with improved performance and stability. Org. Electron. 12, 1370–1375 (2011)CrossRefGoogle Scholar
  12. 12.
    Kim, C.-H., Kymissis, I.: Graphene–organic hybrid electronics. J. Mater. Chem. C 5, 4598–4613 (2017)CrossRefGoogle Scholar
  13. 13.
    Natali, D., Caironi, M.: Charge injection in solution-processed organic field-effect transistors: physics, models and characterization methods. Adv. Mater. 24, 1357–1387 (2012)CrossRefGoogle Scholar
  14. 14.
    Estrada, M., Cerdeira, A., Puigdollers, J., Reséndiz, L., Pallares, J., Marsal, L.F., Voz, C., Iñiguez, B.: Accurate modeling and parameter extraction method for organic TFTs. Solid-State Electron. 49, 1009–1016 (2005)CrossRefGoogle Scholar
  15. 15.
    Hasegawa, Y., Yamada, Y., Hosokai, T., Koswattage, K.R., Yano, M., Wakayama, Y., Sasaki, M.: Overlapping of frontier orbitals in well-defined dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]-thiophene and picene monolayers. J. Phys. Chem. C 120, 21536–21542 (2016)CrossRefGoogle Scholar
  16. 16.
    Kim, C.-H., Hlaing, H., Payne, M.M., Yager, K.G., Bonnassieux, Y., Horowitz, G., Anthony, J.E., Kymissis, I.: Strongly correlated alignment of fluorinated 5,11-bis (triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors. ChemPhysChem 15, 2913–2916 (2014)CrossRefGoogle Scholar
  17. 17.
    Bürgi, L., Richards, T.J., Friend, R.H., Sirringhaus, H.: Close look at charge carrier injection in polymer field-effect transistors. J. Appl. Phys. 94, 6129–6137 (2003)CrossRefGoogle Scholar
  18. 18.
    Chiarella, F., Barra, M., Carella, A., Parlato, L., Sarnelli, E., Cassinese, A.: Contact-resistance effects in PDI8-CN2 n-type thin-film transistors investigated by Kelvin-probe potentiometry. Org. Electron. 28, 299–305 (2016)CrossRefGoogle Scholar
  19. 19.
    Kim, C.H., Bonnassieux, Y., Horowitz, G.: Fundamental benefits of the staggered geometry for organic field-effect transistors. IEEE Electron. Device Lett. 32, 1302–1304 (2011)CrossRefGoogle Scholar
  20. 20.
    Wang, S.D., Yan, Y., Tsukagoshi, K.: Understanding contact behavior in organic thin film transistors. Appl. Phys. Lett. 97, 063307 (2010)CrossRefGoogle Scholar
  21. 21.
    Kim, C.H., Yaghmazadeh, O., Tondelier, D., Jeong, Y.B., Bonnassieux, Y., Horowitz, G.: Capacitive behavior of pentacene-based diodes: quasistatic dielectric constant and dielectric strength. J. Appl. Phys. 109, 083710 (2011)CrossRefGoogle Scholar
  22. 22.
    Kim, C.H., Kisiel, K., Jung, J., Ulanski, J., Tondelier, D., Geffroy, B., Bonnassieux, Y., Horowitz, G.: Persistent photoexcitation effect on the poly(3-hexylthiophene) film: impedance measurement and modeling. Synth. Met. 162, 460–465 (2012)CrossRefGoogle Scholar
  23. 23.
    Kalb, W.L., Batlogg, B.: Calculating the trap density of states in organic field-effect transistors from experiment: a comparison of different methods. Phys. Rev. B 81, 035327 (2010)CrossRefGoogle Scholar

Copyright information

© The Korean Institute of Metals and Materials 2018

Authors and Affiliations

  1. 1.Department of Electronic EngineeringGachon UniversitySeongnamRepublic of Korea

Personalised recommendations

Cite article

Buy options