Electrical Properties of a ZTO Thin-Film Transistor Prepared with Near-Field Electrohydrodynamic Jet Spraying
Zinc-tin oxide (ZTO) thin-films were prepared by applying a near-field around the tip of electro-hydrodynamic (EHD) jet spray system and characterized. Oval shaped multi droplets were obtained by the near-field assisted EHD (NF-EHD) jet spray. The optimized condition of an approximately 2.5 to 3 volts difference between the tip and near-field enabled the oxide semiconductor solution to spray properly. The electrical properties of ZTO thin-film transistor showed a mobility of 2.96 cm2/Vs, an on-to-off ratio of 107, a threshold voltage of 4.40 V, a subthreshold slope of 0.54 V/dec, and. Improved stability under bias stress and relaxation after stress were observed after applying a near-field to the EHD jet spray system.
KeywordsElectrical Properties Near-field Electrohydrodynamic Jet Spray Oxide TFT
Author really appreciate Y.-J. Kwack’s experimental support. This work was supported by the Basic Science Research Program through the National Research Foundation (NRF) funded by the Ministry of Education, Science and Technology (NRF-2015R1A2A2A01003765).
- 13.Wager, J.F., Keszler, D.A., Presley, R.E.: Transparent Electronics, p. 138. Springer, New York (2008)Google Scholar