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Electrical Properties of a ZTO Thin-Film Transistor Prepared with Near-Field Electrohydrodynamic Jet Spraying

  • Woon-Seop Choi
Original Article - Electronics, Magnetics and Photonics
  • 1 Downloads

Abstract

Zinc-tin oxide (ZTO) thin-films were prepared by applying a near-field around the tip of electro-hydrodynamic (EHD) jet spray system and characterized. Oval shaped multi droplets were obtained by the near-field assisted EHD (NF-EHD) jet spray. The optimized condition of an approximately 2.5 to 3 volts difference between the tip and near-field enabled the oxide semiconductor solution to spray properly. The electrical properties of ZTO thin-film transistor showed a mobility of 2.96 cm2/Vs, an on-to-off ratio of 107, a threshold voltage of 4.40 V, a subthreshold slope of 0.54 V/dec, and. Improved stability under bias stress and relaxation after stress were observed after applying a near-field to the EHD jet spray system.

Graphical Abstract

Keywords

Electrical Properties Near-field Electrohydrodynamic Jet Spray Oxide TFT 

Notes

Acknowledgements

Author really appreciate Y.-J. Kwack’s experimental support. This work was supported by the Basic Science Research Program through the National Research Foundation (NRF) funded by the Ministry of Education, Science and Technology (NRF-2015R1A2A2A01003765).

References

  1. 1.
    Wager, J.F.: Transparent electronics. Science 300, 1245–1246 (2003)CrossRefGoogle Scholar
  2. 2.
    Chan, C.K., Richter, L.J., Dinardo, B., Jaye, C., Conrad, B.R., Ro, H.W., Germack, D.S., Fischer, D.A., DeLongchamp, D.M., Gundlach, D.J.: High performance airbrushed organic thin film transistors. J. Appl. Phys. Lett. 96, 133304 (2010)CrossRefGoogle Scholar
  3. 3.
    Bashir, A., Wobkenberg, P.H., Smith, J., Ball, J., Adamopoulos, G., Bradley, D.D.C., Anthopoulos, T.D.: High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere. Adv. Mat. 21, 2226–2231 (2009)CrossRefGoogle Scholar
  4. 4.
    Park, J.U., Hardy, M., Kang, S.J., Barton, K., Adair, K., Mukhopadhyay, D.K., Lee, C.Y., Strano, M.S., Alleyne, A.G., Georgiadis, J.G., Ferreira, P.M., Rogers, J.A.: High-resolution electrohydrodynamic jet print. Nat. Mater. 6, 782–789 (2007)CrossRefGoogle Scholar
  5. 5.
    Kwack, Y.J., Choi, W.S.: Electrohydrodynamic jet spraying technique for oxide thin-film transistor. IEEE Electron Device Lett. 34, 78–80 (2013)CrossRefGoogle Scholar
  6. 6.
    Kwack, Y.J., Choi, W.S.: Electrohydrodynamic jet printed indium-zinc-oxide thin-film transistors. J. Display Tech. 12, 3–7 (2016)CrossRefGoogle Scholar
  7. 7.
    Lee, Y.G., Choi, W.S.: Electrohydrodynamic jet-printed zinc-tin oxide TFTs and their bias stability. ACS Appl. Mater. Interfaces 6, 11167–11172 (2014)CrossRefGoogle Scholar
  8. 8.
    Taylor, G.: Disintegration of water drops in an electric field. Proc. R. Soc. Lond. Ser. A 280, 383–387 (1964)CrossRefGoogle Scholar
  9. 9.
    Lee, J., Choi, W.-S.: Inkjet-processed zinc-tin-oxide thin-film transistor with MoO3 layer and its stability. J. Korean Phys. Soc. 61, 769–772 (2012)CrossRefGoogle Scholar
  10. 10.
    Lee, J., Kwack, Y.J., Choi, W.S.: Inkjet-printed In2O3 Thin-film Transistor at below 200°C. ACS Appl. Mater. Interfaces 5, 11578 (2013)CrossRefGoogle Scholar
  11. 11.
    Matters, M., Leeuw, D., Herwig, P., Brown, A.: Bias-stress induced instability of organic thin film transistors. Synth. Met. 102, 998 (1999)CrossRefGoogle Scholar
  12. 12.
    Suresh, A., Muth, J.: Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors. Appl. Phys. Lett. 92, 033502 (2008)CrossRefGoogle Scholar
  13. 13.
    Wager, J.F., Keszler, D.A., Presley, R.E.: Transparent Electronics, p. 138. Springer, New York (2008)Google Scholar

Copyright information

© The Korean Institute of Metals and Materials 2018

Authors and Affiliations

  1. 1.Department of Display EngineeringHoseo UniversityAsan-SiKorea

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