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Atomic force microscopy and Raman spectroscopy of Pb1−xSnxTe surfaces polished after treatment with H2O2–HBr–ethylene glycol etchants

  • G. P. MalanychEmail author
  • O. F. Kolomys
  • A. A. Korchovyi
  • N. V. Safriuk
  • V. M. Tomashyk
Original Article
  • 2 Downloads

Abstract

The morphology and microstructure of the Pb1−xSnxTe surfaces polished by the H2O2–HBr–ethylene glycol etchants have been investigated using atomic force and electron microscopy techniques. Treatment of the Pb0.8Sn0.2Te crystal surfaces with new etchant mixtures allows to obtain ultra-smooth surfaces Ra < 1 nm. The single crystal surfaces after chemical–mechanical and chemical-dynamic polishing by the bromine emerging compositions has been studied using metallography and profilometry. The structural perfection and chemical composition of the Pb1−xSnxTe surfaces polished by the chemical treatment have been determined by X-ray analysis, scanning electron microscopy, and Raman spectroscopy.

Keywords

Chemical etching Pb1−xSnxTe solid solution Atomic force microscopy Raman spectroscopy X-ray analysis 

Notes

Compliance with ethical standards

Conflict of interest

The authors declare that they have no competing interests.

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Copyright information

© King Abdulaziz City for Science and Technology 2019

Authors and Affiliations

  1. 1.V. Ye. Lashkaryov Institute of Semiconductor PhysicsNational Academy of Sciences of UkraineKyivUkraine

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