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Dislocation Interaction and V-Shaped Growth of the Distorted Structure During Nanoindentation of Cu20Ni20Al20Co20Fe20 (high-entropy alloy)-Coated Copper: A Molecular Dynamics Simulation-Based Study

  • Dinesh Kumar Mishra
  • Md. Meraj
  • S. K. BadJena
  • Snehanshu PalEmail author
Technical Paper
  • 70 Downloads

Abstract

In this paper, the deformation behavior of Cu20Ni20Al20Co20Fe20 high-entropy alloy-coated single-crystal Cu substrate which undergoes nanoindentation has been investigated under molecular dynamic simulation with embedded-atom method potential. The dynamic structural evolutions under nanoindentation are presented using centrosymmetry parameter analysis, common neighbor analysis and radial distribution function plots. In the initial level of nanoindentation, the interface deformation is greatly confronted by the confined V-shaped growth of the distorted structure. But the sudden discrete dislocation burst account for avalanche break-down in the interface layer, which further get influenced by the evolution of multiple dislocation nodes that is significantly governed by core spreading, extended misfit dislocation generation and relative rotation. In the meanwhile, the subsequent generation of dislocation locks, complicated multiple dislocation loops, dislocation junctions and limited cross-slip in wide stacking faults (SFs) hasten the work hardening and in turn slows down the deformation progress. On the other hand, the intermediate appearance of narrow SFs and slip bands significantly reduces the work hardening rate that increases the optimum fracture strain value of the specimen. Moreover, the overall increase in dislocation density and dislocation length leads to a significant growth in dislocation sources which leads to forest hardening in the later stage.

Keywords

High-entropy alloy Nanoindentation Molecular dynamic simulation Deformation Stacking faults Dislocation node 

Notes

Acknowledgements

The authors want to thank the computer center of National Institute of Technology Rourkela for providing high-performance computing facility (HPCF) required for performing this study.

Supplementary material

12666_2018_1471_MOESM1_ESM.docx (219 kb)
Supplementary material 1 (DOCX 218 kb)

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Copyright information

© The Indian Institute of Metals - IIM 2019

Authors and Affiliations

  1. 1.Department of Metallurgy and Materials EngineeringVeer Surendra Sai University of TechnologyBurlaIndia
  2. 2.Department of Metallurgical and Materials EngineeringNational Institute of Technology RourkelaRourkelaIndia

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