3D analytical modeling and electrical characteristics analysis of gate-engineered SiO2/HfO2-stacked tri-gate TFET

  • Dinesh Kumar Dash
  • Priyanka SahaEmail author
  • Aman Mahajan
  • Tripty Kumari
  • Subir Kumar Sarkar


In this paper, we have incorporated the novel concept of gate material engineering in a three-dimensional tri-gate TFET structure with SiO2/HfO2-stacked gate oxide to reap the dual benefits of triple gate material and dielectric engineering in a single device. A detailed 3D analytical modeling of electrostatic potential distribution and electric field of the proposed structure is developed here solving 3D Poisson’s equation with suitable boundary conditions. Tunneling current is then extracted by integrating the band-to-band tunneling generation rate over the volume of the device. A comprehensive performance analysis of the present structure is analyzed in terms of potential profile, electric field and ON-current characteristics of the device by varying several parameters such as channel length, channel thickness, oxide thickness, applied gate and drain bias voltages. An overall performance comparison of the proposed structure with dual and single gate material equivalent tri-gate TFET structures with and without high-k gate stack is also demonstrated to explore the functional efficiency of the present structure. The results of the derived analytical model are compared with SILVACO ATLAS simulated data verifying the accuracy of our model in order to validate it for establishing the superiority of the structure.


TFET 3D modeling Triple metal Kane’s model BTBT Gate stack 





One of the authors, Priyanka Saha thankfully acknowledges this publication as an outcome of the R&D work undertaken project under the Visvesvaraya PhD Scheme of Ministry of Electronics & Information Technology, Government of India, being implemented by Digital India Corporation.


  1. [1]
    S Bangsaruntip, G M Cohen A Majumdar Sleight J W IEEE Electron Device Lett. 31 903 (2010)ADSCrossRefGoogle Scholar
  2. [2]
    K K Young IEEE Trans. Electron Devices 36 399 (1989)ADSMathSciNetCrossRefGoogle Scholar
  3. [3]
    T Skotnicki, G Merckel, T Pedron IEEE Electron Device Lett. 9 109 (1988)ADSCrossRefGoogle Scholar
  4. [4]
    A O Adan, T Naka, A Kagisawa, H Shimizu in SOI Conf. 1998, Proceedings, 1998 IEEE International (1998), p 9Google Scholar
  5. [5]
    P Banerjee, A Mahajan, S K Sarkar, Devices for Integrated Circuit (DevIC), 2017 (2017), p 437Google Scholar
  6. [6]
    P Banerjee, S K Sarkar, J. Comput. Electron. 16 631 (2017)CrossRefGoogle Scholar
  7. [7]
    K K Bhuwalka, J Schulze, I Eisele IEEE Trans. Electron. Devices 52 909 (2005)ADSCrossRefGoogle Scholar
  8. [8]
    T Nirschl, J Fischer, M Fulde, A Bargagli-Stoffi, M Sterkel, J Sedlmeir, C Weber, R Heinrich, U Schaper, J Einfeld, et al Solid-State Electron. 50 44 (2006)ADSCrossRefGoogle Scholar
  9. [9]
    A C Seabaugh, Q Zhang Proc IEEE 98 2095 (2010)CrossRefGoogle Scholar
  10. [10]
    A M Ionescu, K Boucart, K E Moselund, V Pott, D Tsamados, in Semiconductor Conference, 207, CAS 2007. International, vol 2 (2007) p 397Google Scholar
  11. [11]
    K Goplakrishnan, P B Griffin, J DPlummer, in Electron Devices Meeting. IEDM’02. International (2002) p 289Google Scholar
  12. [12]
    H C Nathanson, W E Newell, R A Wickstrom, J R Davis IEEE Trans. Electron Devices 14 117 (1967)ADSCrossRefGoogle Scholar
  13. [13]
    W Y Choi, B G Park, J D Lee, T J K Liu IEEE Electron Device Lett. 28 743 (2007)ADSCrossRefGoogle Scholar
  14. [14]
    S B Rahi, B Ghosh, P Asthana J. Semicond. 35 114005 (2014)ADSCrossRefGoogle Scholar
  15. [15]
    B Ghosh, M W Akram IEEE Electron. Device Lett. 34 584 (2013)ADSCrossRefGoogle Scholar
  16. [16]
    N Patel, A Ramesha, S Mahapatra Microelectron. J. 39 1671 (2008)CrossRefGoogle Scholar
  17. [17]
    R Vishnoi, M J Kumar IEEE Trans. Electron Devices 61 2264 (2014)CrossRefGoogle Scholar
  18. [18]
    D B Abdi, M J Kumar (2014) IEEE J. Electron Devices Soc. 2 187 (2014)CrossRefGoogle Scholar
  19. [19]
    S Kumar, E Goel, K Singh, B Singh, M Kumar, S Jit IEEE Trans. Electron Devices 63 3291 (2016)ADSCrossRefGoogle Scholar
  20. [20]
    S Kumar, E Goel, K Singh, B Singh, P KSingh, K Baral, S Jit IEEE Trans. Electron Devices 64 960 (2017)ADSCrossRefGoogle Scholar
  21. [21]
    S Kumar, K Singh, S Chander, E Goel, P K Singh, K Baral, B Singh, S Jit IEEE Trans. Electron Devices 65 331 (2018)ADSCrossRefGoogle Scholar
  22. [22]
    H Ghanatian, S E Hosseini, J. Comput. Electron. 15 508 (2016)CrossRefGoogle Scholar
  23. [23]
    P Saha, S Sarkhel, S K Sarkar IEEE Tech. Rev. p 1 (2018)Google Scholar
  24. [24]
    H Wang, S Chang, Y Hu, H He, J He, Q Huang, F He, G Wang IEEE Electron Device Lett. 35 798 (2014)CrossRefGoogle Scholar
  25. [25]
    E Goel, S Kumar, K Singh, B Singh, M Kumar, S Jit IEEE Trans. Electron Devices 63 966 (2016)ADSCrossRefGoogle Scholar
  26. [26]
    P Banerjee, S K Sarkar IEEE Trans. Electron Devices 64 368 (2017)ADSCrossRefGoogle Scholar
  27. [27]
    E Kane J. Phys. Chem. Solids 12 181 (1960)ADSCrossRefGoogle Scholar
  28. [28]
    C Schulte-Braucks, S Richter, L Knoll, L Selmi, Q-T Zhao, S Mantl in Solid State Device Research Conference (ESSDERC), 2014 44th European (IEEE, 2014) p 178Google Scholar
  29. [29]
    R Vishnoi, M J Kumar IEEE Trans. Electron Devices 61 2599 (2014)CrossRefGoogle Scholar
  30. [30]
    N Bagga, S Dasgupta IEEE Trans. Electron Devices 64 606 (2017)ADSCrossRefGoogle Scholar
  31. [31]
    P Wu, J Zhang, L Zhang, Z Yu in Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on (IEEE, 2015) p 317Google Scholar
  32. [32]
    ATLAS: 2-D Device Simulator, SILVACO Int., Santa Clara, CA, USA 2013Google Scholar
  33. [33]
    J Knoch, J Appenzeller in Device Research Conference Digest, 2005, DRC’05, 63rd, vol 1 (IEEE, 2005) p 153Google Scholar

Copyright information

© Indian Association for the Cultivation of Science 2019

Authors and Affiliations

  • Dinesh Kumar Dash
    • 1
  • Priyanka Saha
    • 1
    Email author
  • Aman Mahajan
    • 1
  • Tripty Kumari
    • 1
  • Subir Kumar Sarkar
    • 1
  1. 1.Department of Electronics and Telecommunication EngineeringJadavpur UniversityKolkataIndia

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