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A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo/4H–SiC Schottky contact

  • S. ToumiEmail author
  • Z. Ouennoughi
Original Paper
  • 1 Downloads

Abstract

The temperature dependence of the parameters related to the barrier height inhomogeneities for Mo/4H–SiC Schottky diode in 298–498 K temperature range has been investigated. Due to the barrier height inhomogeneities that prevail at the interface of the Schottky diode, a Gaussian distribution of the barrier height is assumed. We have extracted simultaneously, for every temperature, all the parameters characterizing the barrier height such as the mean barrier height \( \bar{\phi }_{{{\text{B}}0}} \), the coefficients ρ2, ρ3 quantifying the deformation of the barrier height, the corresponding temperature T0 modeling the divergence of the ideality factor n from the unity, the standard deviation of the Gaussian distribution of the barrier σs and also the series resistance Rs using a vertical optimization process on the current without any graphical extraction about ρ2, ρ3, \( \bar{\phi }_{{{\text{B}}0}} \), σs and Rs. The extracted parameters like (\( \bar{\phi }_{{{\text{B}}0}} \), ρ2, ρ3, σs, Rs) were found to be a temperature dependent. Moreover, an excellent agreement was obtained between the IVT plots calculated with the extracted parameters using a vertical optimization process with the experimental one.

Keywords

Mo/4H–SiC Schottky diode Metal/semiconductor interface inhomogeneities Barrier’s height parameters T0-effect Vertical optimization method 

PACS Nos.

85.30De 85.30Hi 73.30.+y 73.40.−c 02.60Pn 

Notes

Acknowledgements

One of the authors S. Toumi would like to thank Dr T. Guerfi for his assistance in the correction of the present paper and for numerous fruitful discussions.

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Copyright information

© Indian Association for the Cultivation of Science 2019

Authors and Affiliations

  1. 1.Laboratoire optoélectronique et composants, Department of PhysicsFerhat Abbas UniversitySétifAlgeria
  2. 2.Department of Physics, Faculty of ScienceM’hamed Bouguara UniversityBoumerdesAlgeria

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