Advertisement

Non-linear model of nanoscale devices for memory application

  • J. Devi
  • B. Das
  • S. Sarma
  • P. Datta
Original Paper
  • 26 Downloads

Abstract

COMSOL multiphysics software based model has been developed for the mem-devices comprising of undoped and doped CdSe/starch quantum dots and CdS/PVA nanocomposites as active layer. The assembly of quantum dots/nanocomposites can be represented by an equivalent structure comprising of almost infinitely alternating repetition of building blocks, each block having conducting and non-conducting regions. The time-dependent inductance (L) along with time-dependent resistance (R) and capacitance (C) are used as model input and the solutions are obtained using semiconductor, electric circuit and ordinary differential equation module. From this study it is clear that the mem-behaviour of the as-fabricated nanodevices having \(\frac{{R_{OFF} }}{{R_{ON} }} > 10\) can be well explained by the time-dependent R, C and L features of the nanoparticle assembly adopting COMSOL Multiphysics software. However, for devices with \(\frac{{R_{OFF} }}{{R_{ON} }}\) < 10, hysteresis behavior is governed by only time-dependent R and C features. As higher (> 10) \(\frac{{R_{OFF} }}{{R_{ON} }}\) values enhance efficiency of memory units, the present model incorporating time-dependent L in addition to time-dependent R and C will be useful for optimization in the device design for application as memory units.

Keywords

Quantum dot Time-dependent inductance ROFF/RON ratio Memory devices Modeling and simulation 

PACS Nos.

85.30 De 73.21 La 73.43 cd 02.70-c 07.05.Tp 

Notes

Acknowledgements

The First Author J. Devi would like to acknowledge Department of Science and Technology, Govt. of India and third author S. Sarma would like to acknowledge University of South Africa, South Africa.

Funding

This study was funded by Department of Science and Technology, Govt. of India (Grant Number SR/WOS-A/ET-1102/2015).

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.

References

  1. [1]
    L O Chua IEEE Trans. Circuit Theory CT-18 507 (1971)CrossRefGoogle Scholar
  2. [2]
    G E Moore Electronics 38 114 (1965)Google Scholar
  3. [3]
    D B Strukov, G S Snider, D R Stewart and R S Williams Nature 453 80 (2008)ADSCrossRefGoogle Scholar
  4. [4]
    R S Williams IEEE Spectr. 45 28(2008)CrossRefGoogle Scholar
  5. [5]
    T H Kim, E Y Jang, N J Lee, D J Choi, K-J Lee, J Jang, J Choi, S H Moon and J Cheon Nanoletters 9 2229(2009)ADSCrossRefGoogle Scholar
  6. [6]
    D Schindel and M R Singh J. Phys.: Condens. Matter 27 345301 (2015)Google Scholar
  7. [7]
    F Carreño, M A Anton, S Melle, O G Calderon, E Cabera-Granado, J Cox, M R Singh and A Eqatz-Gonez J. Appl. Phys. 115 064304 (2014)ADSCrossRefGoogle Scholar
  8. [8]
    M J Brzozowski and M R Singh Plasmonics 12 1021(2017)CrossRefGoogle Scholar
  9. [9]
    M R Singh, M C Sekhar, S Balakrishnan and S Masood J. Appl. Phys. 122 034306 (2017)ADSCrossRefGoogle Scholar
  10. [10]
    M R Singh, J Guo, J M J Cid and J E D H Martinez J. Appl. Phys. 121 094303(2017)ADSCrossRefGoogle Scholar
  11. [11]
    M D Ventra, Y V Pershin, and L O Chua Proc. IEEE 9 1717 (2009)CrossRefGoogle Scholar
  12. [12]
    N Sai, N Bushong, R Hatcher and M D Ventra Phys. Rev. B 75 115410 (2007)ADSCrossRefGoogle Scholar
  13. [13]
    S Sarma, B M Mothudi, M S Dhlamini J. MaterSci: Mater. Electron. 27 4551 (2016)Google Scholar
  14. [14]
    R Bhadra PhD thesis titled: Synthesis and characterization of some Semiconductor nanocystallites with emphasis on quantum dots for application in electronics (2009)Google Scholar
  15. [15]
  16. [16]
    Z Biolek, D Biolek and V Biolkova Radioengineering 18 210 (2009)Google Scholar
  17. [17]
    Y N Joglekar and S J Wolf Eur. J. Phys. 30 661(2009)CrossRefGoogle Scholar
  18. [18]
    P S Georgiou, M Barahona, S N Yaliraki and E M Drakakis Microelectron. J. 45 1363 (2014)CrossRefGoogle Scholar
  19. [19]
    R E Pino, J W Bohl, N McDonald, B Wysocki, P Rozwood, K A Campbell, A Obela and ATimilsina et al. IEEE/ACM Int. Symp. Nanoscale Archit. 1 (2010)Google Scholar
  20. [20]
    Z Biolek, D Biolek and V Biolkova Radioengineering 24 369 (2015)CrossRefGoogle Scholar
  21. [21]
    H Das and P Datta J. Exp. Nanoscie. 11 901 (2016)CrossRefGoogle Scholar
  22. [22]
    V Mladenov and S Kirilov ISTET 2013: International Symposium on Theoretical Electrical Engineering: Pilsen, Czech Republic, p. II-13–II-14 24th–26th June 2013Google Scholar
  23. [23]
    B Das, J Devi, P K Kalita and P Datta J. Mater. Sci.: Mater. Electron. 29 546 (2017)Google Scholar
  24. [24]
    Z Wang AIP Conf. Proc. 1839 020048 (2017)CrossRefGoogle Scholar
  25. [25]
    LW Wang and A Zunger Phys. Rev. B 53 15 (1996)Google Scholar
  26. [26]
    D Yu, B L Wehrenberg, P Jha, J Ma and P Guyot-Sionnesta J. Appl. Phys. 99 104315 (2006)ADSCrossRefGoogle Scholar
  27. [27]
    P Cheng, K Sun and Y H Hu Nano Lett. 16 572 (2016)ADSCrossRefGoogle Scholar
  28. [28]
    L O Chua Proc. IEEE 91 1830 (2003)CrossRefGoogle Scholar

Copyright information

© Indian Association for the Cultivation of Science 2018

Authors and Affiliations

  1. 1.Department of Electronics and Communication TechnologyGauhati UniversityGuwahatiIndia
  2. 2.Department of PhysicsPandu CollegeGuwahatiIndia
  3. 3.Department of PhysicsUniversity of South AfricaPretoriaSouth Africa

Personalised recommendations