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pp 1–8 | Cite as

Research on Noise Suppression in Double-Gate Nano-MOSFETs Based on Monte Carlo Simulation

  • Xiaofei JiaEmail author
  • Liang He
  • Wenhao Chen
Original Paper
  • 7 Downloads

Abstract

Experimental observations and simulation results have shown that the dominant noise source of excess noise changes from thermal noise to shot noise with scaling of MOSFETs, and shot noise can be acted by Fermi and Coulomb suppression. But previous studies on shot noise suppression in nano-MOSFETs either ignored the suppression or just emphasized the existence of it but giving no more deep research. Based on Monte Carlo simulation, current noise in realistic nano-MOSFETs is simulated with considering Fermi effect and Coulomb interaction. Thus, shot noise suppression factor (Fano) considering Fermi effect and the Fano considering Fermi effect and Coulomb interaction are obtained. The variation of suppression factors with source-drain voltage, gate voltage, temperature and source-drain doping is investigated with theoretical analysis. The results we obtained are consistent with the experiments and the mesoscopic theoretically explain.

Keywords

Noise suppression Double-gate nano-MOSFETs Monte Carlo simulation 

Notes

Acknowledgements

This research was supported by National Natural Science Foundation of China (Grant No. 61801005); Young Talent fund of University Association for Science and Technology in Shaanxi (Grant No. 20180117); Outstanding Young Talents Project in Shaanxi Province (2018JCRC01); Outstanding Young Talents Project in Shaanxi Province (2018JCRC01); and the Scientific Research Fund of Shaanxi Provincial Education Department (Grant No. 19JK0012).

References

  1. [1]
    Y. Zhuang and Q. Sun, Noise and low noise technology in semiconductor devices, National Defense Industry Press, Beijing (1993)Google Scholar
  2. [2]
    J. Wang, X. M. Peng, Z. J. Liu, et al., Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET, Chin. Phys. B, 27(2) (2018) 027201ADSCrossRefGoogle Scholar
  3. [3]
    M. Lundstrom and Z. Ren, Essential physics of carrier transport in nanoscale MOSFETs. IEEE Trans. Electron Devices, 49(1) (2002) 133–141Google Scholar
  4. [4]
    E. Sangiorgi, P. Palestri, D. Esseni, et al., The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs, Solid-State Electron, 52(9) (2008) 1414–1423ADSCrossRefGoogle Scholar
  5. [5]
    J. Jeon, J. Lee, J. Kim, et al., The first observation of shot noise characteristics in 10-nm scale MOSFETs, Symposium on VLSI Technology, June 16–18 (2009) (pp. 48–49)Google Scholar
  6. [6]
    R. Navid, C. Jungemann, T. Lee, et al., High-frequency noise in nanoscale metal oxide semiconductor field effect transistors, J. Appl. Phys., 101 (2007) 124501ADSCrossRefGoogle Scholar
  7. [7]
    N. Sano, K. Natori, M. Mukai, et al., Physical mechanism of current fluctuation under ultra-small device structures, Extended Abstracts of 1998 Sixth International Workshop on Computational Electronics. Ibaraki, Japan, Oct. 19–20 (1998) (pp. 112–115)Google Scholar
  8. [8]
    R.. Jindal, Physics of high-frequency noise in insulated gate field-effect transistors, In: The Proceedings of International Workshop on Electron Devices and Semiconductor Technology. Lafayette, USA, June 3–4 (2007) (pp. 51–56)Google Scholar
  9. [9]
    G. Iannaccone, Analytical and numerical investigation of noise in nanoscale ballistic field effect transistors, J. Comput. Electron., 3(3) (2004) 199–202CrossRefGoogle Scholar
  10. [10]
    A. Khurana, K. S. Nagla, Signal averaging for noise reduction in mobile robot 3D measurement system, MAPAN, 33(1) (2018) 33–41Google Scholar
  11. [11]
    Y. Xu, Y. Du, S. Cheng, A method of de-noise and harmonics detection in power system based on periodicity analysis, MAPAN, 33(2) (2018) 167–177Google Scholar
  12. [12]
    Y. Wang, X. Zhang, X. Liu, et al., New technology and new structure devices in CMOS technology of 32 nm and below technology nodes, Chin. Sci. E Ser., 38(006) (2008) 921–932Google Scholar
  13. [13]
    Y. Isobe, K. Hara, D. Navarro, et al., Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold condition, IEEE Trans. Electron Devices, 90(4) (2007) 885Google Scholar
  14. [14]
    R. Navid, R. W. Dutton, The physical phenomena responsible for excess noise in short-channel MOS devices, In: The Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, Stanford Univ., CA, USA (pp. 75–78) (2002)Google Scholar
  15. [15]
    X. F. Jia, L. Du, D. H. Tang, et al., Research on shot noise suppression in quasi-ballistic transport nano-MOSFETs (in Chinese), Acta Sin. Phys., 61(12) (2012) 127202Google Scholar
  16. [16]
    L. Ye, Monte Carlo simulation of small size semiconductor devices, Science Press, Beijing (1997)Google Scholar
  17. [17]
    C. Palermo, J. Torres, L. Varani, et al., Monte Carlo simulation of THz radiation detection in GaN MOSFET n + nn + channel with uncentered gate in n-region, J. Phys., 906 (2017) 012013Google Scholar
  18. [18]
    X. Oriols, E. Fernāndez-Díaz, A. Alvarez, et al., An electron injection model for time-dependent simulators of nanoscale devices with electron confinement: application to the comparison of the intrinsic noise of 3D-, 2D-and 1D-ballistic transistors, Solid State Electron., 51(2) (2007) 306–319ADSCrossRefGoogle Scholar
  19. [19]
    M. Lundstrom, Z. Ren, Essential physics of carrier transport in nanoscale MOSFETs, IEEE Trans. Electron Devices, 49(1) (2002) 133–141ADSCrossRefGoogle Scholar
  20. [20]
    A. Rahman, J. Guo, S. Datta, et al., Theory of ballistic nanotransistors, IEEE Trans. Electron Devices, 50(9) (2003) 1853–1864ADSCrossRefGoogle Scholar
  21. [21]
    J. Rhew, Z. Ren, M. Lundstrom, A numerical study of ballistic transport in a nanoscale MOSFET, Solid State Electron., 46(11) (2002) 1899–1906ADSCrossRefGoogle Scholar
  22. [22]
    Y. Naveh, D. Averin, K. Likharev, Shot noise in diffusive conductors: a quantitative analysis of electron-phonon interaction effects, Phys. Rev. B, 58(23) (1998) 15371–15374ADSCrossRefGoogle Scholar
  23. [23]
    T. González, J. Mateos, D. Pardo, et al., Microscopic analysis of shot-noise suppression in nondegenerate ballistic transport, Semicond. Sci. Technol., 13 (1998) 714–724ADSCrossRefGoogle Scholar
  24. [24]
    A. A. Bhardwajan, S. Maharana, T. S. Ganesh, A comparative study of methods of clock ensemble development, MAPAN, 33(2) (2018) 127–130Google Scholar
  25. [25]
    B. Ehtesham, P. S. Bist, T. John, Development of an automated precision direct current source for generation of pA currents based on capacitance charging method at CSIR-NPL, MAPAN, 32(1) (2017) 17–22Google Scholar

Copyright information

© Metrology Society of India 2019

Authors and Affiliations

  1. 1.School of Electronic and Information EngineeringAnkang UniversityAnkangPeople’s Republic of China
  2. 2.Advanced Materials and Nano Technology SchoolXidian UniversityXi’anPeople’s Republic of China
  3. 3.Southwest China Institute of Electronic TechnologyChengduChina

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