pp 1–8 | Cite as

Research on Noise Suppression in Double-Gate Nano-MOSFETs Based on Monte Carlo Simulation

  • Xiaofei JiaEmail author
  • Liang He
  • Wenhao Chen
Original Paper


Experimental observations and simulation results have shown that the dominant noise source of excess noise changes from thermal noise to shot noise with scaling of MOSFETs, and shot noise can be acted by Fermi and Coulomb suppression. But previous studies on shot noise suppression in nano-MOSFETs either ignored the suppression or just emphasized the existence of it but giving no more deep research. Based on Monte Carlo simulation, current noise in realistic nano-MOSFETs is simulated with considering Fermi effect and Coulomb interaction. Thus, shot noise suppression factor (Fano) considering Fermi effect and the Fano considering Fermi effect and Coulomb interaction are obtained. The variation of suppression factors with source-drain voltage, gate voltage, temperature and source-drain doping is investigated with theoretical analysis. The results we obtained are consistent with the experiments and the mesoscopic theoretically explain.


Noise suppression Double-gate nano-MOSFETs Monte Carlo simulation 



This research was supported by National Natural Science Foundation of China (Grant No. 61801005); Young Talent fund of University Association for Science and Technology in Shaanxi (Grant No. 20180117); Outstanding Young Talents Project in Shaanxi Province (2018JCRC01); Outstanding Young Talents Project in Shaanxi Province (2018JCRC01); and the Scientific Research Fund of Shaanxi Provincial Education Department (Grant No. 19JK0012).


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Copyright information

© Metrology Society of India 2019

Authors and Affiliations

  1. 1.School of Electronic and Information EngineeringAnkang UniversityAnkangPeople’s Republic of China
  2. 2.Advanced Materials and Nano Technology SchoolXidian UniversityXi’anPeople’s Republic of China
  3. 3.Southwest China Institute of Electronic TechnologyChengduChina

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