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Fabrication of High Responsivity for MgO NPs/PSi Heterojunction Device by Sol-Gel Technique

  • Aseel M. Abdul MajeedEmail author
  • Itab F. Hussein
  • Rana O. Abd Al-Jalil
Original Paper
  • 1 Downloads

Abstract

In this work, porous silicon was preparation by electrochemical etching and the MgO thin film by sol-gel technique. The structural properties of MgO NPs were studied using XRD and the morphology properties by field emission scanning electron microscopy. The electrical properties; spectral responsivity, detectivity of the photodetector were measured. The Spectral responsivity of MgO/p-PSi/Si photodector was found to be around 0.39 at 550 nm and 0.56 A/W at 800 nm and the specific detectivity of MgO/Psi/Si was found to be 6*1010 W−1 cm Hz1/2. The photodetector shows a photovoltaic behavior with a maximum Voc. of 0.25 V and ISc. of 7.6*10−3 A.

Keywords

MgO/PSi Photodetector Detectivity 

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Copyright information

© Springer Nature B.V. 2019

Authors and Affiliations

  • Aseel M. Abdul Majeed
    • 1
    Email author
  • Itab F. Hussein
    • 1
  • Rana O. Abd Al-Jalil
    • 1
  1. 1.Physics Department, College of ScienceMustansiryah UniversityBaghdadIraq

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