, Volume 12, Issue 1, pp 239–244 | Cite as

Compact Modeling of Fin-LDMOS Transistor Based on the Surface Potential

  • Amin Pak
  • Ali A. OroujiEmail author
Original Paper


One of the basic components of smart power integrated circuits (SPICs) is the laterally diffused metal oxide semiconductor (LDMOS) transistors. In this paper, we propose Fin-LDMOS transistor based on the surface potential. In order to improve the accuracy, we have taken into account not only the fin-shape structure of the gate but also the mobility reduction and saturation velocity. The proposed method is evaluated considering a broad range of biases and physical parameters of the device. The comparison between modeling results and 3D simulations confirm the remarkable accuracy of our model.


Fin-LDMOS Modeling Channel current Drift region current Surface potential 


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Copyright information

© Springer Nature B.V. 2019

Authors and Affiliations

  1. 1.Electrical and Computer Engineering DepartmentSemnan UniversitySemnanIran

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