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, Volume 11, Issue 1, pp 487–493 | Cite as

Innovative Utilization of Improved n-doped μc-SiOx:H Films to Amplify the Performance of Micromorph Solar Cells

  • Gourab DasEmail author
  • Sukanta Bose
  • Sumita Mukhopadhyay
  • Chandan Banerjee
  • Asok K. Barua
Original Paper
  • 17 Downloads

Abstract

Due to in-situ deposition process doped SiOx material attracts the PV community as intermediate reflecting layer (IRL) for the less hazardous deposition process. Previously we have been shown that how to formulate a better quality SiOx layer using seeding technique. In this paper we have shown that how this superior quality material will be beneficial as IRL and improve the performance of micromorph solar cells. Enhanced performance is observed when SiOx material is deposited with the help of highly conducting seed layer. For improving the performance of the micromorph solar cell further we have eliminated the n-layer of the top constituent cell. In the context of substituting the top n-layer, SiOx layer grown on seed layer is more significant as of its suitable optoelectronics properties. Initial efficiency of ∼12% is perceived in micromorph solar cells with the improved SiOx based IRL used innovatively which is 7.9% higher than that of the cell with conventionally developed and typical use of IRL.

Keywords

SiOx films Seed layer PECVD IRL Micromorph solar cell 

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Notes

Acknowledgements

This work has been supported by Ministry of New and Renewable Energy (MNRE), Govt. of India. I gratefully acknowledge DST-INSPIRE and DST-SERB Programme Division (Govt. of India) for their financial support. I would like to thank Prof. H. Saha for his excellent support and advice.

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Copyright information

© Springer Nature B.V. 2018

Authors and Affiliations

  1. 1.Centre of Excellence for Green Energy and Sensor SystemsIndian Institute of Engineering Science & TechnologyHowrahIndia
  2. 2.National Institute of Solar EnergyGurgaon, HaryanaIndia

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