, Volume 11, Issue 2, pp 919–924 | Cite as

Pressure Dependence of Mechanical Properties in AlP and AlSb Semiconductors

  • E. B. ElkenanyEmail author
  • A. R. Degheidy
  • O. A. Alfrnwani
Original Paper


The effect of pressure on the mechanical properties of zinc-blende AlP and AlSb semiconductors has been investigated using the local empirical pseudo-potential method (EPM). The studied quantities are the elastic constants(cij), bulk modulus (Bu), shear modulus (Sh),Young modulus (Y0), Poisson’s ratio (σ, bond stretching (α, bond binding force (β, internal strain parameter (ζ, linear compressibility (C0) and Cauchy ratio (Ca). All studied quantities are found to be affected with pressure except the internal strain parameter and Poisson’s ratio. The mechanical stability criteria for the materials of interest for pressure up to 120 Kbar are fulfilled. The considered materials can be used in optoelectronic devices. The overall agreement between our results and the available experimental and theoretical data is found to be reasonable good. Our calculated values may serve as a reference, especially for high pressure.


Pressure Mechanical properties AlP and AlSb semiconductors 


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  1. 1.
    Iga K, Kinoshita S (1996) Process technology for semiconductor lasers. Springer, BerlinCrossRefGoogle Scholar
  2. 2.
    Quillec M (1996) Materials for optoelectronics. Kluwer Academic, BostonCrossRefGoogle Scholar
  3. 3.
    Levinshtein M, Rumyantsev S, Shur M (1999) Handbook series on semiconductor parameters, vol 2. World Scientific, SingaporeGoogle Scholar
  4. 4.
    Vurgaftman I, Meyer JR, Ram-Mohan LR (2001) J Appl Phys 89:5815CrossRefGoogle Scholar
  5. 5.
    Hannachi L, Bouarissa N (2009) Phys B 404:3650CrossRefGoogle Scholar
  6. 6.
    Hamad Jappor R, Mudar Abdulsattar A, Ahmed Abdul-Lettif M (2010) Open Cond Matter Phys J 3:1–7CrossRefGoogle Scholar
  7. 7.
    Degheidy AR, Elkenany EB (2013) Mater Chem Phys 143:1CrossRefGoogle Scholar
  8. 8.
    Degheidy AR, Elkenany EB (2012) Math Sci Semicond Process 15:505CrossRefGoogle Scholar
  9. 9.
    Degheidy AR, Elkenany EB (2012) Chin Phys B 21:12CrossRefGoogle Scholar
  10. 10.
    Degheidy AR, Elkenany EB (2011) Semiconductors 45:10CrossRefGoogle Scholar
  11. 11.
    Degheidy AR, Elabsy AM, Elkenany EB (2012) Superlattice Microstruct 52:336CrossRefGoogle Scholar
  12. 12.
    Joshi KB, Nishant Patel N (2008) PRAMANA. J Phys 70:295–305Google Scholar
  13. 13.
    Mujica A, Rodri Âguez-Hernândez P, Radescu S, Needs RJ, Munõz A (1999) Phys Stat Sol (B) 39:211Google Scholar
  14. 14.
    Saib S, Bouarissa N, Rodríguez-hernández P, Munõz A (2008) Physica B 403:4059–4062CrossRefGoogle Scholar
  15. 15.
    Harrison P (2005) Quantum wells wires and quantum dots, 2nd edn. Wiley, New YorkCrossRefGoogle Scholar
  16. 16.
    Elabsy AM, Elkenany EB (2010) Phys B 405:266CrossRefGoogle Scholar
  17. 17.
    Dongguo C, Ravindra NM (2012) J Mater Sci 47:5735–5742CrossRefGoogle Scholar
  18. 18.
    Wang HY, Cao J, Huang XY, Huang JM (2012) Cond Matter Phys 15(1, 13705):1–10Google Scholar
  19. 19.
    Varshney D, Sharma P, Kaurav N, Singh RK (2005) Bull Mater Sci 28:651–661CrossRefGoogle Scholar
  20. 20.
    Adachi S (2005) Properties of group IV, III–V and II–VI semiconductors. Wiley, HobokenCrossRefGoogle Scholar
  21. 21.
    Vogl P (1978) J Phys 11:251Google Scholar
  22. 22.
    Bouarissa N (2006) Mater Chem Phys 100:41CrossRefGoogle Scholar
  23. 23.
    Baranowski JM (1984) J Phys 17:6287Google Scholar
  24. 24.
    Zerroug S, Ali Sahraoui F, Bouarissa N (2006) Mater Lett 60:546–550CrossRefGoogle Scholar
  25. 25.
    Bouhemadou A, Ghebouli MA, Ghebouli B, Fatmi M, Bin-Omran S, Ucgun E, Ocak HY (2013) Mater Sci Semicond Process 16:718–726CrossRefGoogle Scholar
  26. 26.
    Gueddim A, Zerdoum R, Bouarissa N (2006) Mater Sci Eng B 131:111–115CrossRefGoogle Scholar
  27. 27.
    Martin RM (1970) Phys Rev B 1:4005CrossRefGoogle Scholar
  28. 28.
    de Gironcoli S, Baroni S, Resta R (1989) Phys Rev Lett 62:2853CrossRefGoogle Scholar
  29. 29.
    Kim K, Lambrecht WRL, Segall B (1996) Phys Rev B 53:16310CrossRefGoogle Scholar
  30. 30.
    Daoud S, Bioud N, Bouarissa N (2015) Mater Sci Semicond Process 31:124–130CrossRefGoogle Scholar
  31. 31.
    Aouina NY, Mezrag F, Boucenna M, El-Farra M, Bouarissa N (2005) Mater Sci Eng B 123:87–93CrossRefGoogle Scholar
  32. 32.
    Saib S, Bouarissa N (2006) Solid State Electron 50:763–768CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  • E. B. Elkenany
    • 1
    Email author
  • A. R. Degheidy
    • 1
  • O. A. Alfrnwani
    • 1
  1. 1.Department of Physics, Faculty of ScienceMansoura UniversityMansouraEgypt

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