, Volume 11, Issue 2, pp 837–842 | Cite as

Photoluminescence Study of Deep Level Defects in ZnO Thin Films

  • A. KabirEmail author
  • I. Bouanane
  • D. Boulainine
  • S. Zerkout
  • G. Schmerber
  • B. Boudjema
Original Paper


In the present work, zinc oxide (ZnO) thin films were prepared by heating, at 500 C, metallic Zn films deposited onto Si (100) substrates by RF magnetron sputtering. According to the x-rays diffraction patterns, the polycrystalline hexagonal ZnO phase (wurtzite) was obtained with a preferential orientation along the (101) planes. The increase of both the crystallites size and the Zn-O bond length, as a function of the heating time, reflect the improvement of the crystalline quality of the investigated films. The investigated films emitted in ultraviolet, visible and infrared regions. The ultraviolet emission was linked to the crystalline quality of the films. All the visible emission related defects were identified. Their concentrations vary differently as a function of the heating time. The infrared emission originated from the oxygen anti-sites (OZn). The correlation between the decrease of the electrical resistivity and the increase of both 2 + charged oxygen vacancies (\(V_{O}^{++})\) and hydrogen impurities (H-I) defects suggested that the unintentional n-type conductivity in ZnO came from the collective contribution of \(V_{O}^{++}\) and H-I defects.


ZnO Heating time Deep level defects Hydrogen impurities n-type conductivity 


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The authors gratefully acknowledge one of them; G. Schmerber for his help during the samples characterization. Thanks are due to G. Ferblantier and D. Muller, from ICube in Strasbourg (France) for their help during the optical measurements.


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Copyright information

© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  • A. Kabir
    • 1
    Email author
  • I. Bouanane
    • 1
  • D. Boulainine
    • 1
  • S. Zerkout
    • 2
  • G. Schmerber
    • 3
  • B. Boudjema
    • 1
  1. 1.Laboratoire de Recherche sur la Physico-Chimie des Surfaces et Interfaces (LRPCSI), Faculté des SciencesSkikdaAlgeria
  2. 2.LCCUniversité des Frères MentouriConstantineAlgeria
  3. 3.IPCMS, UMR 7504 CNRS-UdSStrasbourg Cedex 2France

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