, Volume 11, Issue 1, pp 257–265 | Cite as

Linearity Distortion Analysis of Junctionless Quadruple Gate MOSFETs for Analog Applications

  • Santosh Kumar GuptaEmail author
  • Akash Singh Rawat
  • Yogesh Kumar Verma
  • Varun Mishra
Original Paper


This paper examines a Junctionless quadruple gate (JLQG) MOSFET for analog and linearity distortion performance by numerically calculating transconductance and its higher order derivatives (gm1, gm2and gm3), VIP2, VIP3, IIP3 and IMD3. Influence of various physical device parameters: channel length, height (or width), gate oxide thickness, and channel doping concentration on the linearity distortion parameters are analyzed. From the numerical calculations it has been shown that the desirable characteristics for analog application at a given technology node are obtained for higher values of tSi, tox, and Nd. The present analysis also reveals the guidelines for the design of JLQG MOSFETs with least linearity distortion.


Junctionless Quadruple gate MOSFETs Linearity distortion Analog 


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Copyright information

© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineeringMotilal Nehru National Institute of TechnologyAllahabadIndia

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