, Volume 11, Issue 1, pp 557–562 | Cite as

High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation

  • Moujahed Gassoumi
  • Abdelhamid Helali
  • Malek GassoumiEmail author
  • Christophe Gaquiere
  • Hassen Maaref
Open Access
Original Paper


AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to reduce the effects of trapping and consequently has a large effect on these radio-frequency parameters. We used cold-FET and hot FET technique to extract the intrinsic and extrinsic parameters in order to show the effect passivation of parasitic elements; the parasitic capacitances, resistances and inductances. From this point we discover the extent of their impact on power and microwave performance.


AlGaN/GaN/Si HEMTs Passivation Radio-frequency Equivalent circuit parameters Small signal modeling 



The authors gratefully acknowledge Qassim University, represented by the Deanship of Scientific Research, on the material support for this research under the number (3286).


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Copyright information

© The Author(s) 2018

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (, which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Authors and Affiliations

  • Moujahed Gassoumi
    • 1
  • Abdelhamid Helali
    • 1
  • Malek Gassoumi
    • 1
    • 2
    Email author
  • Christophe Gaquiere
    • 3
  • Hassen Maaref
    • 1
  1. 1.Laboratoire de Micro-Optoélectronique et Nanostructures (LMON)Université de MonastirMonastirTunisie
  2. 2.College of Science, Department of PhysicsQassim UniversityBuraidahSaudi Arabia
  3. 3.Institut d’Electronique de Microélectronique et de Nanotechnologie IEMNUniversité des Sciences et Technologies de LilleVilleneuve d’AscqFrance

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