pp 1–6 | Cite as

Investigation of Strongly Hydrophobic and Thick Porous Silicon Stain Films Properties

  • Maha AyatEmail author
  • Mohamed Kechouane
  • Chafiaa Yaddadene
  • Malika Berouaken
  • Katia Ayouz
  • Luca Boarino
  • Noureddine Gabouze
Original Paper


Porous silicon (PSi) structures with strong hydrophobicity have been achieved by chemical etching of p-type silicon substrates in a solution based on hydrofluoric acid solution (HF) and vanadium oxide (V2O5). The surface morphology and microstructure of the elaborated structured silicon surfaces were investigated using Scanning Electron Microscope (SEM), contact angle and Fourier Transform Infrared spectroscopy (FTIR). The results show that the obtained structures exhibit hierarchically porous surfaces with porous pillars of silicon (PPSi) and an important hydrophobicity of the surface. The electrical properties of those PPSi structures were investigated in presence of 10 ppm of NO2 gas. The response time was about 30s at room temperature. Our results demonstrate that PPSi/Si are highly hydrophobic for long time and suitable for applications in the field of self-cleaning and may be a good candidate in elaborating practical NO2 sensors.


Porous silicon Pillars structures Hydrophobicity Gas sensing applications 


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This work was funded under the Algerian General Directorate of Scientific Research and Technological Development (DGRSDT).

SEM characterizations and gas sensing experiments have been performed at the Nanofacility Division, Piemonte, Torino in the framework of the EU Project NAS-ERA.

A special acknowledgment, to Pr. Leigh T. Canham for his participation in the preparation of the present manuscript.


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Copyright information

© Springer Nature B.V. 2019

Authors and Affiliations

  1. 1.Thin Films and Semiconductors (CMS) LaboratoryUniversity of Sciences and Technology Houari Boumediene, USTHBAlgiersAlgeria
  2. 2.Thin Films, Surfaces and Interfaces (CMSI) DivisionResearch Center in Semiconductors Technology for Energetics (CRTSE)AlgiersAlgeria
  3. 3.Nanofacility, Instituto Nazionale di Ricerca MetrologicaTorinoItaly

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