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, Volume 11, Issue 1, pp 533–542 | Cite as

Finite Elements Method Coupled with Delaunay Triangulation Method Applied on a Silicon Corner Diode

  • Mohammed Azzedine
  • Macho AnaniEmail author
  • Zouaoui Chama
  • Sara Lebid
  • Christian Mathieu
Original Paper
  • 20 Downloads

Abstract

This work considers a two dimensional numerical device simulation system using a novel digitizing scheme based on finite elements coupled with the Delaunay triangulation method which allowed an optimal mesh involved in nonrectangular devices as a corner diode. A grid was generated automatically according to the specified device geometry standing on the Delaunay triangulation process. The solution of the problem consists in the resolution of three strong nonlinear partial differential equations (PDE) which are, in occurrence, two dimensional Poisson and continuity equations. Modeled voltage, free carriers distribution and I-V characteristics were extracted when the PN junction resolution was based on second-order Bezier curves. The results are presented using a Delaunay triangulation meshing mathematical tool.

Keywords

Delaunay triangulation Finite elements method Silicon corner diode Bezier curves 

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Copyright information

© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  • Mohammed Azzedine
    • 1
  • Macho Anani
    • 2
    Email author
  • Zouaoui Chama
    • 2
  • Sara Lebid
    • 2
  • Christian Mathieu
    • 3
  1. 1.University AbdelHamid Ibn Badis of MostaganemMostaganemAlgeria
  2. 2.Faculty of Electrical EngineeringUniversity Djillali Liabes of Sidi Bel AbbesSidi Bel AbbesAlgeria
  3. 3.Faculté des Sciences Jean PerrinUniversité d’ArtoisLensFrance

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