Finite Elements Method Coupled with Delaunay Triangulation Method Applied on a Silicon Corner Diode
- 20 Downloads
This work considers a two dimensional numerical device simulation system using a novel digitizing scheme based on finite elements coupled with the Delaunay triangulation method which allowed an optimal mesh involved in nonrectangular devices as a corner diode. A grid was generated automatically according to the specified device geometry standing on the Delaunay triangulation process. The solution of the problem consists in the resolution of three strong nonlinear partial differential equations (PDE) which are, in occurrence, two dimensional Poisson and continuity equations. Modeled voltage, free carriers distribution and I-V characteristics were extracted when the PN junction resolution was based on second-order Bezier curves. The results are presented using a Delaunay triangulation meshing mathematical tool.
KeywordsDelaunay triangulation Finite elements method Silicon corner diode Bezier curves
Unable to display preview. Download preview PDF.
- 4.De Floriani L, Puppo E (1992) An online algorithm for constrained Delaunay triangulation. CVGIP: Graphical models and image processing 54(3):290–300Google Scholar
- 11.Sze SM (1981) Physics of semiconductor devices. Wiley, New York. ISBN 0471-09837-XGoogle Scholar
- 21.Anani M, Mathieu C, Khadraoui M, Chama Z, Lebid S, Amar Y (2009) High-grade efficiency III-Nitrides semiconductor solar cell. Microchem J 40:427–434Google Scholar