Effect of annealing temperature on the microstructure and optoelectrical properties of ZnO thin films and their application in self-powered accelerometers
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This paper reports a piezoelectric nanogenerator (NG) with a thickness of approximately 80 μm for miniaturized self-powered acceleration sensors. To deposit the piezoelectric zinc oxide (ZnO) thin film, a magnetron sputtering machine was used. Polymethyl methacrylate (PMMA) and aluminum-doped zinc oxide (AZO) were used as the insulating layer and the top electrode of the NG, respectively. The experimental results show that the ZnO thin films annealed at 150°C exhibited the highest crystallinity among the prepared films and an optical band gap of 3.24 eV. The NG fabricated with an AZO/PMMA/ZnO/stainless steel configuration exhibited a higher output voltage than the device with an AZO/ZnO/PMMA/stainless steel configuration. In addition, the annealing temperature affected the open-circuit voltage of the NGs; the output voltage reached 3.81 V when the annealing temperature was 150°C. The open-circuit voltage of the prepared self-powered accelerometer increased linearly with acceleration. In addition, the small NG-based accelerometer, which exhibited excellent fatigue resistance, can be used for acceleration measurements of small and lightweight devices.
Keywordspiezoelectric ZnO thin film RF magnetron sputtering annealing temperature accelerometer
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This work was supported by the National Natural Science Foundation of China (No. 61671017), Key Project of Excellent Youth Talent Support Program in Colleges and Universities of Anhui Province (No. gxyqZD2018004), Provincial Natural Science Foundation of Anhui Higher Education Institution of China (No. KJ2016A787), and Anhui Provincial Natural Science Foundation of China (No. 1508085ME72).
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