Dielectric and energy storage properties of PbO–SrO–Nb2O5–Na2O–Si thin films by annealing
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Dielectric and energy storage properties of PbO–SrO–Na2O–Nb2O5–SiO2 (PSNNS) thin films with annealing temperature from 700 to 850 °C were investigated by measuring their capacitance-electric filed curve and hysteresis loops. The results show that the highest dielectric constant and energy density are 81.2 and 17.0 J·cm−3, respectively, which is obtained in the sample with annealing temperature of 800 °C. Annealed from 700 to 800 °C, the dielectric constant and energy storage performance of PSNNS films are continuously improved. However, with annealing temperature up to 850 °C, their dielectric constant decreases, which might be related with the removal of interfacial defects as a function of annealing temperature. Defect is one of the causes of space charge phenomenon, resulting in the increase in dielectric constant. Moreover, the microstructure analysis by X-ray diffraction (XRD) and transmission electron microscope (TEM) indicates that the change of crystallization phase and interfacial polarization takes responsibility to the results.
KeywordsThin film Pulse laser deposition Annealing temperature Energy storage density
This study was financially supported by the National Natural Science Foundation of China (No. 51477012) and Beijing Nova Program (No. xx2016046).