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Journal of Optics

, Volume 47, Issue 4, pp 511–515 | Cite as

Reduction of yellow and blue luminescence in Si-doped GaN by rapid thermal annealing

  • X. Z. Chai
  • B. Y. Qu
  • P. Liu
  • Y. C. Jiao
  • Y. S. Zhu
  • X. Q. Fang
  • P. Han
  • R. Zhang
Research Article
  • 48 Downloads

Abstract

Si-doped GaN films grown by metal organic chemical vapour deposition have been annealed under different annealing conditions in N2 ambient. The annealed films have been characterized by photoluminescence and high resolution X-ray diffraction. The results show that the rapid thermal annealing (RTA) treatment suppresses the yellow and blue luminescence bands in the annealed Si-doped GaN films. For the sample annealed at 850 °C for 3 min, the yellow and blue band intensities even decreases by approximate one order of magnitude over the as-grown sample. In addition, the densities of the edge and screw threading dislocations in the Si-doped GaN also decrease after the RTA treatment. These facts provide the evidence that the RTA technique can effectively improve the crystalline quality of the Si-GaN films.

Keywords

Yellow luminescence Blue luminescence Thermal annealing 

Notes

Acknowledgements

This work was supported by the National Nature Science Foundation of China (61473266, 61673404), the Program for Science and Technology Innovation Talents in Universities of Henan Province (16HASTIT033), the Science and Technique Foundation of Henan Province (152102210153), and the Key Program in Universities of Henan Province (17B520044).

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Copyright information

© The Optical Society of India 2018

Authors and Affiliations

  • X. Z. Chai
    • 1
  • B. Y. Qu
    • 1
  • P. Liu
    • 1
  • Y. C. Jiao
    • 1
  • Y. S. Zhu
    • 1
  • X. Q. Fang
    • 1
  • P. Han
    • 2
  • R. Zhang
    • 2
  1. 1.School of Electric and Information EngineerZhongyuan University of TechnologyZhengzhouChina
  2. 2.School of Electronic Science and EngineeringNanjing UniversityNanjingChina

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