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Temperature-dependent Raman spectroscopy studies of 1–5-layer WSe2

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Abstract

In this work, Raman measurements of 1–5-layer WSe2 supported on SiO2/Si in the temperature range of 133 to 533 K are reported. A physical model including both volume effect and temperature effect is used to quantitatively understand the nonlinear temperature dependence of E2g1 Raman mode. It is found this nonlinear dependence of Raman mode mainly originates from thermal expansion effect and three-phonon scattering. The former effect increases with an increase in number of layers, which is inverse for the latter effect. The temperature-dependent thermal expansion coefficients of 1–5-layer WSe2 are also obtained from Raman spectra. The full width at half maximum (FWHM) of E2g1 mode is also systematically studied both experimentally and theoretically in the temperature range of 133 to 413 K. It is found that the increase in FWHM of E2g1 mode originates from decaying of E2g1 phonon. This work will promote the understanding of anharmonic behaviors of phonons in WSe2 flakes with different thicknesses.

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Acknowledgements

This work was supported the National Key R&D Program of China (Nos. 2017YFF0108900, 2016YFF0203802, and 2017YFD080120203), the Dalian Youth Science and Technology Star Project (No. 2017RQ138), the project from Liaoning Education Department (No. JDL2019015), the National Natural Science Foundation of China (Nos. 51872058 and 21904029) and the Fundamental Research Funds for Central Universities (No. HIT. NSRIF. 2019071).

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Correspondence to Yingying Wang or Mingqiang Zou.

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Li, Z., Wang, Y., Jiang, J. et al. Temperature-dependent Raman spectroscopy studies of 1–5-layer WSe2. Nano Res. (2020). https://doi.org/10.1007/s12274-020-2669-0

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Keywords

  • WSe2
  • thermal expansion coefficients
  • temperature-dependent Raman spectroscopy