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Nano Research

, Volume 12, Issue 11, pp 2781–2787 | Cite as

Selective growth of wide band gap atomically thin Sb2O3 inorganic molecular crystal on WS2

  • Guangzhuang Sun
  • Bo Li
  • Shifa Wang
  • Zhengwei Zhang
  • Jia Li
  • Xidong DuanEmail author
  • Xiangfeng Duan
Research Article
  • 57 Downloads

Abstract

Heterostructures combined by different individual two-dimensional (2D) materials are essential building blocks to realize unique electronic, optoelectronic properties and multifunctional applications. To date, the direct growth of 2D/2D atomic van der Waals heterostructures (vdWHs) have been extensively investigated. However, the heterostructures from 2D inorganic molecular crystals and atomic crystals have been rarely reported. Here we report two-step direct epitaxial growth of the inorganic molecular-atomic Sb2O3/WS2 vdWHs. The thickness of Sb2O3 nanosheets on WS2 nanosheets can be tuned by variable growth temperatures. Oriented growth behavior of Sb2O3 on WS2 was determined through statistics. Optical images, Raman spectra, Raman mappings and selected-area electron diffraction (SAED), etc., reveal that Sb2O3/WS2 heterostructures are vertically stacked with high crystal quality. Electrical transport measurements demonstrate that the heterotransistors based on the heterostructures possess high current on/off ratio of 5 × 105, obvious gate-tunable and current rectification output characteristics. Optoelectronic characterizations show that the heterostructures have a clear photoresponse with high responsivity of 16.4 A/W. The growth of vdWHs from 2D inorganic molecular-atomic crystals may open up new opportunities in 2D functional electronics and optoelectronics.

Keywords

vapor phase epitaxy selective growth Sb2O3/WS2 heterostructures band alignment rectification effect 

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Notes

Acknowledgements

We acknowledge the financial support from the Fundamental Research Funds of the Central Universities (No. 531118010112), the Double First-Class University Initiative of Hunan University (No. 531109100004). We also acknowledge the support from the National Natural Science Foundation of China (No. 751214296), Hunan Key Laboratory of Two-Dimensional Materials (No. 801200005), and Strategic Priority Research Program of Chinese Academy of Science (No. XDB30000000).

Supplementary material

12274_2019_2513_MOESM1_ESM.pdf (2.2 mb)
Selective growth of wide band gap atomically thin Sb2O3 inorganic molecular crystal on WS2

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Copyright information

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Guangzhuang Sun
    • 1
  • Bo Li
    • 2
  • Shifa Wang
    • 3
  • Zhengwei Zhang
    • 1
  • Jia Li
    • 1
  • Xidong Duan
    • 1
    Email author
  • Xiangfeng Duan
    • 4
  1. 1.State Key Laboratory for Chemo/Biosensing and Chemometrics and Hunan Key Laboratory of Two-Dimensional Materials, College of Chemistry and Chemical EngineeringHunan UniversityChangshaChina
  2. 2.Department of Applied Physics, School of Physics and ElectronicsHunan UniversityChangshaChina
  3. 3.School of Electronic and Information EngineeringChongqing Three Gorges UniversityChongqing, WanzhouChina
  4. 4.Department of Chemistry and BiochemistryUniversity of CaliforniaLos AngelesUSA

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