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Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

  • Jingkai Qin
  • Hang Yan
  • Gang Qiu
  • Mengwei Si
  • Peng Miao
  • Yuqin Duan
  • Wenzhu Shao
  • Liang Zhen
  • Chengyan XuEmail author
  • Peide D YeEmail author
Research Article
  • 67 Downloads

Abstract

The combination of mixed-dimensional semiconducting materials can provide additional freedom to construct integrated nanoscale electronic and optoelectronic devices with diverse functionalities. In this work, we report a high-performance dual-channel phototransistor based on one-dimensional (1D)/two-dimensional (2D) trigonal selenium (t-Se)/ReS2 heterostructures grown by chemical vapor deposition. The injection and separation efficiency of photogenerated electron–hole pairs can be greatly improved due to the high-quality interfacial contact between t-Se nanobelts and ReS2 films. Compared with bare ReS2 film devices, the dual-channel phototransistor based on t-Se/ReS2 heterostructure exhibits considerable enhancement with the responsivity (R) and detectivity (D*) up to 98 A·W–1 and 6 × 1010 Jones at 400 nm illumination with an intensity of 1.7 mW·cm−2, respectively. Besides, the response time can also be reduced by three times of magnitude to less than 50 ms due to the type-II band alignment at the interface. This study opens up a promising avenue for high-performance photodetectors by constructing mixed-dimensional heterostructures.

Keywords

van der Waals heterostructures ReS2 trigonal selenium (t-Se) nanobelt phototransistor 

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Notes

Acknowledgements

The work is in part supported by the National Natural Science Foundation of China (Nos. 51572057 and 51772064), AFOSR/NSF EFRI 2DARE program, ARO and SRC.

Supplementary material

12274_2019_2275_MOESM1_ESM.pdf (4 mb)
Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

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Copyright information

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Jingkai Qin
    • 1
    • 2
    • 3
  • Hang Yan
    • 1
    • 3
  • Gang Qiu
    • 2
  • Mengwei Si
    • 2
  • Peng Miao
    • 4
  • Yuqin Duan
    • 2
  • Wenzhu Shao
    • 3
  • Liang Zhen
    • 1
    • 3
  • Chengyan Xu
    • 1
    • 3
    Email author
  • Peide D Ye
    • 2
    Email author
  1. 1.State Key Laboratory of Advanced Welding and JoiningHarbin Institute of TechnologyHarbinChina
  2. 2.School of Electrical and Computer EngineeringPurdue UniversityWest LafayetteUSA
  3. 3.School of Materials Science and EngineeringHarbin Institute of TechnologyHarbinChina
  4. 4.School of Chemistry and Chemical EngineeringHarbin Institute of TechnologyHarbinChina

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