Observation of unconventional anomalous Hall effect in epitaxial CrTe thin films
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We have studied the magnetic and electrical transport properties of epitaxial NiAs-type CrTe thin films grown on SrTiO3(111) substrates. Unlike rectangle hysteresis loops obtained from magnetic measurements, we have identified intriguing extra bump/dip features from anomalous Hall experiments on the films with thicknesses less than 12 nm. This observed Hall anomaly is phenomenologically consistent with the occurrence of a topological Hall effect(THE) in chiral magnets with a skyrmion phase. Furthermore, the THE contribution can be tuned by the film thickness, showing the key contribution of asymmetric interfaces in stabilizing Néel-type skyrmions. Our work demonstrates that a CrTe thin film on SrTiO3(111) substrates is a good material candidate for studying real-space topological transport.
Keywordstopological Hall effect CrTe films skyrmion phase molecular beam epitaxy
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Work performed at Tsinghua was supported by the National Natural Science Foundation of China (Nos. 51561145005 and 11427903), National Key R&D Program of China (Nos. 2017YFA0206200 and 2016YFA0302300), the 1000-Youth talent program of China, the State Key Laboratory of Low-Dimensional Quantum Physics, and the Beijing Advanced Innovation Center for Future Chip (ICFC).
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