Effect of strain on \(\hbox {GaAs}_{1-x-y}\hbox {N}_{x}\hbox {Bi}_{y}/\hbox {GaAs}\) to extract the electronic band structure and optical gain by using 16-band \(\varvec{kp}\) Hamiltonian

  • Arvind Sharma
  • T D DasEmail author


\(\hbox {GaAs}_{1-x-y}\hbox {N}_{x}\hbox {Bi}_{y}\) is a suitable candidate for \(1.06\,{\upmu }\hbox {m}\) solid state lasers and high-efficiency solar cells. Mathematical models such as 16-band kp model is used to study the band structure, strain generated effect, band offset and variation of their parameters with Bi and N concentrations. Lattice constants of alloy \(\hbox {GaAs}_{1-x-y}\hbox {N}_{x}\hbox {Bi}_{y}\) with \(x/y=0.58\) can match those of GaAs with the incorporation of Bi and N into GaAsNBi. Arsenic atom substitution due to the incorporation of N and Bi impurity atoms causes a significant band gap reduction of \(\sim \)200 meV for \(\hbox {GaAs}_{0.937}\hbox {N}_{0.023}\hbox {Bi}_{0.04}\) alloys under lattice-matched conditions and in addition, by tuning the concentrations of N and Bi, the electrical and optical properties of GaAsNBi can be controlled. Optical gain of \(\hbox {GaAs}_{1-x-y}\hbox {N}_{x}\hbox {Bi}_{y}\) quantum well (QW) and GaAs as a barrier are calculated in generalized mode and observed the effect of the energy level of GaAs barrier on the GaAsNBi QW.


\(\mathrm{GaAs}_{1-x-y}\mathrm{N}_{x}\mathrm{Bi}_{y}\) \({ kp}\) method strain optical gain 


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Copyright information

© Indian Academy of Sciences 2019

Authors and Affiliations

  1. 1.Department of Basic & Applied ScienceNational Institute of TechnologyPapum PareIndia

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