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Optoelectronics Letters

, Volume 15, Issue 6, pp 411–414 | Cite as

Study on electronic blocking layer of 403 nm GaN-based vertical cavity surface emitting lasers

  • Bi-feng Cui (崔碧峰)Email author
  • Yang Wang (王阳)
  • Tian-xiao Fang (房天啸)
  • Shuai Hao (郝帅)
  • Jin Cheng (程瑾)
  • Cai-fang Li (李彩芳)
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Copyright information

© Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Bi-feng Cui (崔碧峰)
    • 1
    Email author
  • Yang Wang (王阳)
    • 1
  • Tian-xiao Fang (房天啸)
    • 1
  • Shuai Hao (郝帅)
    • 1
  • Jin Cheng (程瑾)
    • 1
  • Cai-fang Li (李彩芳)
    • 1
  1. 1.Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information TechnologyBeijing University of TechnologyBeijingChina

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