Optoelectronics Letters

, Volume 14, Issue 5, pp 342–345 | Cite as

1 550 nm long-wavelength vertical-cavity surface emitting lasers

  • Li-Jie Liu (刘丽杰)
  • Yuan-Da Wu (吴远大)Email author
  • Yue Wang (王玥)
  • Jun-Ming An (安俊明)
  • Xiong-Wei Hu (胡雄伟)


A 1 550 nm long-wavelength vertical cavity surface emitting laser (VCSEL) on InP substrate is designed and fabricated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn(1−xy)As/InP, and 6 strain compensated AlxGayIn(1−xy)As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection (DBR) mirror system has been formed by fabricating 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW operation at room temperature.

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Copyright information

© Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Li-Jie Liu (刘丽杰)
    • 1
    • 2
  • Yuan-Da Wu (吴远大)
    • 1
    • 2
    Email author
  • Yue Wang (王玥)
    • 1
  • Jun-Ming An (安俊明)
    • 1
    • 2
  • Xiong-Wei Hu (胡雄伟)
    • 1
  1. 1.State Key Laboratory of Integrated Optoelectronics, Institute of SemiconductorsChinese Academy of SciencesBeijingChina
  2. 2.College of Material Science and Optoelectronic TechnologyUniversity of Chinese Academy of SciencesBeijingChina

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