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Bipolar Resistive Switching Characteristics and Nonvolatile Flash Memory Behavior in Polyvinylcarbazole Films

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Abstract

A nonvolatile resistive switching memory device based on active layers of polyvinylcarbazole (PVK) was fabricated by a spin-coating technique, and the electrical characteristics of the devices consisting of SnO2 doped with fluorine (FTO)/PVK/Ag were investigated. The experimental results revealed that the FTO/PVK/Ag device has electrical bistable nonvolatile flash memory behavior. The current remained stable for 2.3 × 103 s in both the ON state and OFF state, and the current in the ON and OFF states of the FTO/PVK/Ag device did not change substantially after 750 pulse read cycles. In addition, based on the electrochemical properties of the PVK, its resistive switching behavior was investigated. This work provides a promising solution for the development of polymer memory devices.

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References

  1. 1.

    B. Sun, S. Zhu, S. Mao, P. Zheng, Y. Xia, F. Yang, M. Lei, and Y. Zhao, J. Colloid Interf. Sci. 513, 774 (2018).

  2. 2.

    Y.M. Sun, L. Li, D.Z. Wen, X.D. Ba, and G. Li, Phys. Chem. Chem. Phys. 17, 17150 (2015).

  3. 3.

    Y. Sun and D. Wen, J. Alloy. Compd. 806, 215 (2019).

  4. 4.

    Y. Sun, D. Wen, and F. Sun, Org. Electron. 65, 141 (2019).

  5. 5.

    B. Sun, X. Zhang, G. Zhou, P. Li, Y. Zhang, H. Wang, Y. Xia, and Y. Zhao, Org. Electron. 42, 181 (2017).

  6. 6.

    S. Zhu, B. Sun, Y. Chen, T. Li, G. Zhou, H. Zhao, W. Mao, and Y. Zhao, J. Mater. Chem. C 7, 7593 (2019).

  7. 7.

    Y. Sun and D. Wen, J. Phys. Chem. C 122, 10582 (2018).

  8. 8.

    B. Sun, M. Tang, J. Gao, and C. Ming Li, ChemElectroChem 3, 896 (2016).

  9. 9.

    G. Casula, Y. Busby, A. Franquet, V. Spampinato, L. Houssiau, A. Bonfiglio, and P. Cosseddu, Org. Electron. 64, 209 (2019).

  10. 10.

    Y.M. Sun, J.G. Liu, C.P. Ai, and D.Z. Wen, Phys. Chem. Chem. Phys. 18, 11341 (2016).

  11. 11.

    Y.M. Sun, J.G. Lu, C.P. Ai, D.Z. Wen, and X.D. Bai, Org. Electron. 32, 7 (2016).

  12. 12.

    P. Heremans, G.H. Gelinck, R. Muller, K.J. Baeg, D.Y. Kim, and Y.Y. Noh, Chem. Mater. 341, 23 (2011).

  13. 13.

    M.M. Rehman, B.-S. Yang, Y.-J. Yang, K.S. Karimov, and K.H. Choi, Curr. Appl. Phys. 17, 533 (2017).

  14. 14.

    W. Lin, S. Liu, T. Gong, Q. Zhao, and W. Huang, Adv. Mater. 26, 570 (2014).

  15. 15.

    Y. Sun, J. Lu, C. Ai, D. Wen, and X. Bai, Phys. Chem. Chem. Phys. 18, 30808 (2016).

  16. 16.

    Y.M. Sun, C.P. Ai, J. Lu, L. Li, D. Wen, and X. Bai, Thin Solid Films 598, 293 (2016).

  17. 17.

    G. Liu, Q. Ling, E.Y.H. Teo, C. Zhu, D.S. Chan, K. Neoh, and E. Kang, ACS Nano 3, 1929 (2009).

  18. 18.

    Y. Sun, L. Li, D. Wen, and X. Bai, Org. Electron. 25, 283 (2015).

  19. 19.

    Y. Sun, D. Wen, X. Bai, J. Lu, and C. Ai, Sci. Rep. 7, 3938 (2017).

  20. 20.

    K. Rajan, I. Roppolo, K. Bejtka, A. Chiappone, S. Bocchini, D. Perrone, C.F. Pirri, C. Ricciardi, and A. Chiolerio, Appl. Surf. Sci. 443, 418 (2018).

  21. 21.

    Y.M. Sun, L. Li, D.Z. Wen, and X.D. Bai, J. Phys. Chem. C 119, 19520 (2015).

  22. 22.

    Y. Sun, D. Wen, and X. Bai, Phys. Chem. Chem. Phys. 20, 5771 (2018).

  23. 23.

    Y. Ko, S.G. Hahm, K. Murata, Y.Y. Kim, B.J. Ree, S. Song, T. Michinobu, and M. Ree, Macromolecules 47, 8154 (2014).

  24. 24.

    T. Kurosawa, T. Higashihara, and M. Ueda, Polym. Chem. 4, 16 (2013).

  25. 25.

    Y.-S. Lai, C.-H. Tu, and D.-L. Kwong, Appl. Phys. Lett. 87, 122101 (2005).

  26. 26.

    Y.-S. Lai, C.-H. Tu, D.-L. Kwong, and J.S. Chen, I.E.E.E. Electron Device Lett. 27, 451 (2006).

  27. 27.

    S.L. Lim, Q. Ling, E.Y.H. Teo, C.X. Zhu, D.S.H. Chan, E.-T. Kang, and K.G. Neoh, Chem. Mater. 19, 5148 (2007).

  28. 28.

    T. Kondo, S.M. Lee, M. Malicki, B. Domercq, S.R. Marder, and B. Kippelen, Adv. Funct. Mater. 18, 1112 (2008).

  29. 29.

    J. Lin and D. Ma, Appl. Phys. Lett. 93, 093505 (2008).

  30. 30.

    Y. Liu, N. Li, X. Xia, Q. Xu, J. Ge, and J. Lu, Mater. Chem. Phys. 123, 685 (2010).

  31. 31.

    J.-S. Choi and D.H. Suh, Macromol. Symp. 268, 81 (2008).

  32. 32.

    A. Suresh, G. Krishnakumar, and M.A.G. Namboothiry, Phys. Chem. Chem. Phys. 16, 13074 (2014).

  33. 33.

    G. Tian, D. Wu, S. Qi, Z. Wu, and X. Wang, Macromol. Rapid Commun. 32, 384 (2011).

  34. 34.

    B.J. Ree, W. Kwon, K. Kim, Y.-G. Ko, Y.Y. Kim, H. Lee, and M. Ree, ACS. Appl. Mater. Interfaces 6, 21692 (2014).

  35. 35.

    Y. Kim, J. Lee, W. Kwon, J. Choi, J. Kim, J. Kim, and M. Ree, Polymer 178, 121584 (2019).

  36. 36.

    L. Shi, G.F. Tian, H.B. Ye, S.L. Qi, and D.Z. Wu, Polymer 55, 1150 (2014).

  37. 37.

    B. Hu, R. Quhe, C. Chen, F. Zhuge, X. Zhu, S. Peng, X. Chen, L. Pan, Y. Wu, W. Zheng, Q. Yan, J. Lu, and R.-W. Li, J. Mater. Chem. 22, 16422 (2012).

  38. 38.

    Y.G. Ko, D.M. Kim, K. Kim, S. Jung, D. Wi, T. Michinobu, and M. Ree, ACS. Appl. Mater. Interfaces 6, 8415 (2014).

  39. 39.

    M. Yadav, R.S.R. Velampati, D. Mandal, and R. Sharam, J. Eelectron. Mater. 47, 3560 (2018).

  40. 40.

    Q. Zhang, C. Jia, W. Liu, and W. Zhang, Mat. Sci. Semicon. Proc. 41, 544 (2016).

  41. 41.

    C.H. Huang, J.S. Huang, C.C. Lai, H.W. Huang, S.J. Lin, and Y.L. Chueh, ACS. Appl. Mater. Interfaces 5, 6017 (2013).

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Correspondence to Xiaodan Liu.

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Zhao, E., Liu, X., Liu, G. et al. Bipolar Resistive Switching Characteristics and Nonvolatile Flash Memory Behavior in Polyvinylcarbazole Films. Journal of Elec Materi 49, 1801–1807 (2020). https://doi.org/10.1007/s11664-019-07881-5

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Keywords

  • PVK
  • memory effects
  • nonvolatile
  • resistive switching