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Gallium Phosphide Solar Cell Structures with Improved Quantum Efficiencies

  • Hui-Ying SiaoEmail author
  • Ryan J. Bunk
  • Jerry M. Woodall
Topical Collection: 61st Electronic Materials Conference 2019
Part of the following topical collections:
  1. 61st Electronic Materials Conference 2019

Abstract

Gallium phosphide (GaP) solar cell structures with improved quantum efficiencies were realized using a modified liquid phase epitaxy (LPE) technique and diodes formed using semi-transparent Schottky contacts. The improvement is due to the addition of a small amount of aluminum to the gallium and phosphorus containing LPE melt. The Al reduces the background concentration of oxygen in the melt, which is known to produce deep trap states in GaP. Additionally, it was found that by depositing an aluminum (Al)-rich AlGaP layer on top of the active GaP and then selectively etching it away, the surface morphology of the active layer was significantly improved. Thus, the modified LPE technique eliminates the major problem of meniscus lines associated with the standard LPE method.

Keywords

Liquid phase epitaxy (LPE) gallium phosphide III–V semiconductors 

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Notes

Acknowledgments

Funding was provided by U.S. Army (Grant No. W911NF1910130).

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Copyright information

© The Minerals, Metals & Materials Society 2019

Authors and Affiliations

  1. 1.Department of Electrical and Computer EngineeringUniversity of CaliforniaDavisUSA

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